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IRF8301MTRPBF

IRF8301MTRPBF
Mfr. #:
IRF8301MTRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 27A DIRECTFET MT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8301MTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Montageart
SMD/SMT
Handelsname
DirektFET
Paket-Koffer
DirectFET-7
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
2.8 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
17 ns
Anstiegszeit
30 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
192 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V
Rds-On-Drain-Source-Widerstand
1.9 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
25 ns
Typische-Einschaltverzögerungszeit
20 ns
Qg-Gate-Ladung
51 nC
Vorwärts-Transkonduktanz-Min
150 S
Tags
IRF830, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
***ical
Trans MOSFET N-CH 30V 34A 7-Pin Direct-FET MT T/R
***ark
TAPE AND REEL / 30V DirectFET Power MOSFET
***ponent Sense
MOSFET;VDS(MAX)= 30 VOLTS;1.8 WATTS;UNIQ
***ronik
N-CH 30V 34A 1,3mOhm DirectFET
***i-Key
MOSF N CH 30V 34A DIRECTFET MT
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 192A, DIRECTFET MT-7; Transistor Polarity:N Channel; Continuous Drain Current Id:192A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:89W; Transistor Case Style:DirectFET MT; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:StrongIRFET, HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***ineon
Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull
***nell
MOSFET, CA-N, 30V, 192A, DIRECTFET MT-7; Polarità Transistor:Canale N; Corrente Continua di Drain Id:192A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:89W; Modello Case Transistor:DirectFET MT; No. di Pin:7Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:StrongIRFET, HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IRF8301MTRPBF
DISTI # IRF8301MTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 27A DIRECTFET MT
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		On Order
  • 4800:$1.0225
IRF8301MTRPBF
DISTI # IRF8301MTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 27A DIRECTFET MT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.1746
  • 500:$1.4177
  • 100:$1.8227
  • 10:$2.2680
  • 1:$2.5100
IRF8301MTRPBF
DISTI # IRF8301MTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 27A DIRECTFET MT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.1746
  • 500:$1.4177
  • 100:$1.8227
  • 10:$2.2680
  • 1:$2.5100
IRF8301MTRPBF
DISTI # IRF8301MTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 34A 7-Pin Direct-FET MT T/R (Alt: IRF8301MTRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel		Asia - 0
    IRF8301MTRPBF
    DISTI # IRF8301MTRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 34A 7-Pin Direct-FET MT T/R - Tape and Reel (Alt: IRF8301MTRPBF)
    RoHS: Compliant
    Min Qty: 4800
    Container: Reel    		Americas - 0
    • 4800:$1.0299
    • 9600:$0.9929
    • 19200:$0.9569
    • 28800:$0.9239
    • 48000:$0.9079
    IRF8301MTRPBF
    DISTI # SP001555752    		Infineon Technologies AGTrans MOSFET N-CH 30V 34A 7-Pin Direct-FET MT T/R (Alt: SP001555752)
    RoHS: Compliant
    Min Qty: 4800
    Container: Tape and Reel    		Europe - 0
    • 4800:€1.1699
    • 9600:€0.9749
    • 19200:€0.8999
    • 28800:€0.8349
    • 48000:€0.7799
    IRF8301MTRPBF
    DISTI # 942-IRF8301MTRPBF    		Infineon Technologies AGMOSFET MOSF N CH 30V 34A DIRECTFET MT
    RoHS: Compliant    		0
    • 1:$2.1100
    • 10:$1.7900
    • 100:$1.4300
    • 500:$1.2600
    • 1000:$1.0400
    • 2500:$0.9660
    • 4800:$0.9300
    IRF8301MTRPBF
    DISTI # 2579997    		Infineon Technologies AGMOSFET, N-CH, 30V, 192A, DIRECTFET MT-7
    RoHS: Compliant    		0
    • 1:£1.8000
    • 10:£1.3700
    • 100:£1.0900
    • 250:£1.0200
    • 500:£0.9520
    IRF8301MTRPBF
    DISTI # 2579997    		Infineon Technologies AGMOSFET, N-CH, 30V, 192A, DIRECTFET MT-7
    RoHS: Compliant    		0
    • 1:$3.9700
    • 10:$3.5900
    • 100:$2.8900
    • 500:$2.2500
    • 1000:$1.8600
    Bild Teil # Beschreibung
    IRF830A

    Mfr.#: IRF830A

    OMO.#: OMO-IRF830A

    		 MOSFET RECOMMENDED ALT 844-IRF830APBF
    IRF8302MTRPBF/84.08302.0

    Mfr.#: IRF8302MTRPBF/84.08302.0

    OMO.#: OMO-IRF8302MTRPBF-84-08302-0-1190

    		 Neu und Original
    IRF830AS

    Mfr.#: IRF830AS

    OMO.#: OMO-IRF830AS-VISHAY

    		 MOSFET N-CH 500V 5A D2PAK
    IRF830B,IRF830BTSTU_FP00

    Mfr.#: IRF830B,IRF830BTSTU_FP00

    OMO.#: OMO-IRF830B-IRF830BTSTU-FP00-1190

    		 Neu und Original
    IRF830PBF,IRF830

    Mfr.#: IRF830PBF,IRF830

    OMO.#: OMO-IRF830PBF-IRF830-1190

    		 Neu und Original
    IRF830PBR

    Mfr.#: IRF830PBR

    OMO.#: OMO-IRF830PBR-1190

    		 Neu und Original
    IRF830R

    Mfr.#: IRF830R

    OMO.#: OMO-IRF830R-1190

    		 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IRF830STRLPBF

    Mfr.#: IRF830STRLPBF

    OMO.#: OMO-IRF830STRLPBF-VISHAY

    		 IGBT Transistors MOSFET N-Chan 500V 4.5 Amp
    IRF830A

    Mfr.#: IRF830A

    OMO.#: OMO-IRF830A-VISHAY

    		 MOSFET N-Chan 500V 5.0 Amp
    IRF8302MTRPBF

    Mfr.#: IRF8302MTRPBF

    OMO.#: OMO-IRF8302MTRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET 30V N-Channel HEXFET Power MOSFET
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IRF8301MTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,36 $
    1,36 $
    10
    1,29 $
    12,90 $
    100
    1,22 $
    122,18 $
    500
    1,15 $
    576,95 $
    1000
    1,09 $
    1 086,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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