IRF9952TRPBF

IRF9952TRPBF
Mfr. #:
IRF9952TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT DUAL N/PCh 30V 3.5A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF9952TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9952TRPBF DatasheetIRF9952TRPBF Datasheet (P4-P6)IRF9952TRPBF Datasheet (P7-P9)IRF9952TRPBF Datasheet (P10)
ECAD Model:
Mehr Informationen:
IRF9952TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
3.5 A
Rds On - Drain-Source-Widerstand:
150 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
6.9 nC
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel, 1 P-Channel
Breite:
3.9 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001555914
Gewichtseinheit:
0.019048 oz
Tags
IRF9952TRP, IRF9952T, IRF9952, IRF995, IRF99, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRF9952PBF Dual N/P-channel MOSFET Transistor; 2.3 A; 3.5 A; 30 V; 8-Pin SOIC
***ark
Mosfet Transistor, N And P Channel, 3.5 A, 30 V, 100 Mohm, 10 V, 1 V
***o-Tech
Dual N/P-Channel 30 V 2 W 6.9/6.1 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***itex
Transistor: N+P-MOSFET; unipolar; 30V/-30V; 3.5A/-2.3A; 0.1ohm/0.25ohm; 2W; -55+150 deg.C; SMD; SO8
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL NP LOGIC SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Cont Current Id N Channel 2: 3.5A; Cont Current Id P Channel: 2.3A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 2; On State Resistance N Channel Max: 100mohm; On State Resistance P Channel Max: 250mohm; Pin Configuration: b; Power Dissipation P Channel 2: 2W; Pulse Current Idm: 16A; Pulse Current Idm N Channel 2: 16A; Pulse Current Idm P Channel: 10A; Row Pitch: 6.3mm; SMD Marking: F9952; Termination Type: Surface Mount Device; Voltage Vds P Channel Max: 30V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF9952TRPBF
DISTI # V72:2272_13889894
Infineon Technologies AGTrans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC T/R9435
  • 6000:$0.2575
  • 3000:$0.2947
  • 1000:$0.2963
  • 500:$0.3088
  • 250:$0.3431
  • 100:$0.3547
  • 25:$0.4893
  • 10:$0.4918
  • 1:$0.5600
IRF9952TRPBF
DISTI # IRF9952PBFCT-ND
Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7987In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF9952TRPBF
DISTI # IRF9952PBFDKR-ND
Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7987In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF9952TRPBF
DISTI # IRF9952PBFTR-ND
Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
4000In Stock
  • 4000:$0.3291
IRF9952TRPBF
DISTI # 30214062
Infineon Technologies AGTrans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC T/R12000
  • 4000:$0.2208
IRF9952TRPBF
DISTI # 26196184
Infineon Technologies AGTrans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC T/R9435
  • 6000:$0.2575
  • 3000:$0.2947
  • 1000:$0.2963
  • 500:$0.3088
  • 250:$0.3431
  • 100:$0.3547
  • 31:$0.4893
IRF9952TRPBF
DISTI # SP001555914
Infineon Technologies AGTrans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC T/R (Alt: SP001555914)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Europe - 16000
  • 4000:€0.2409
  • 8000:€0.2399
  • 16000:€0.2399
  • 24000:€0.2389
  • 40000:€0.2389
IRF9952TRPBF
DISTI # IRF9952TRPBF
Infineon Technologies AGTrans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF9952TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.2919
  • 8000:$0.2809
  • 16000:$0.2709
  • 24000:$0.2619
  • 40000:$0.2569
IRF9952TRPBF
DISTI # 42Y0426
Infineon Technologies AGDual MOSFET, N and P Channel, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V RoHS Compliant: Yes4580
  • 1:$0.7700
  • 10:$0.6400
  • 25:$0.5640
  • 50:$0.4890
  • 100:$0.4130
  • 250:$0.3860
  • 500:$0.3580
  • 1000:$0.3310
IRF9952TRPBF
DISTI # 70017732
Infineon Technologies AGIRF9952TRPBF Dual N/P-channel MOSFET Transistor,2.3 A,3.5 A,30 V,8-Pin SOIC
RoHS: Compliant
265
  • 1:$0.6900
  • 10:$0.6100
  • 100:$0.5300
  • 500:$0.4600
  • 1000:$0.4100
IRF9952TRPBFInfineon Technologies AGDual N/P-Channel 30 V 0.1/0.15 Ohm 6.9/6.1 nC HEXFET Power Mosfet - SOIC-8
RoHS: Compliant
4000Reel
  • 4000:$0.2550
IRF9952TRPBF
DISTI # 942-IRF9952TRPBF
Infineon Technologies AGMOSFET MOSFT DUAL N/PCh 30V 3.5A
RoHS: Compliant
4625
  • 1:$0.7700
  • 10:$0.6400
  • 100:$0.4130
  • 1000:$0.3310
  • 4000:$0.2790
IRF9952TRPBF
DISTI # 8273934P
Infineon Technologies AGDUAL N/P-CH MOSFET 3.5A/2.3A 30V SOIC8, RL14960
  • 100:£0.2790
  • 400:£0.2460
  • 1000:£0.2250
IRF9952TRPBF
DISTI # IRF9952PBF-GURT
Infineon Technologies AGN+P-Ch 30V 3,5/2,3A 2,0W SO8
RoHS: Compliant
4050
  • 50:€0.2275
  • 100:€0.1875
  • 500:€0.1675
  • 2000:€0.1615
IRF9952TRPBF
DISTI # TMOSP12083
Infineon Technologies AGCMOS 30V 3.5/-2.3A 100/250mOhm
RoHS: Compliant
Stock DE - 20000Stock US - 0
  • 4000:$0.2914
  • 8000:$0.2747
  • 12000:$0.2581
  • 16000:$0.2331
  • 28000:$0.2248
IRF9952TRPBF
DISTI # 2468029RL
Infineon Technologies AGMOSFET, N & P CH, 30V, 3.5A, SOIC-8
RoHS: Compliant
0
  • 1:$1.2200
  • 10:$1.0200
  • 100:$0.6540
  • 1000:$0.5240
  • 4000:$0.4410
IRF9952TRPBF
DISTI # 2468029
Infineon Technologies AGMOSFET, N & P CH, 30V, 3.5A, SOIC-8
RoHS: Compliant
580
  • 1:$1.2200
  • 10:$1.0200
  • 100:$0.6540
  • 1000:$0.5240
  • 4000:$0.4410
IRF9952TRPBF
DISTI # XSLY00000000892
INFINEON/IRSO-8
RoHS: Compliant
5760
  • 4000:$0.2914
  • 5760:$0.2720
IRF9952TRPBF
DISTI # XSFP00000050486
Infineon Technologies AG 
RoHS: Compliant
5384
  • 4000:$0.5100
  • 5384:$0.4636
IRF9952TRPBF
DISTI # 2468029
Infineon Technologies AGMOSFET, N & P CH, 30V, 3.5A, SOIC-8
RoHS: Compliant
5050
  • 5:£0.3350
  • 25:£0.3100
  • 100:£0.2850
  • 250:£0.2510
  • 500:£0.2280
IRF9952TRPBF
DISTI # C1S322000487961
Infineon Technologies AGTrans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC T/R
RoHS: Compliant
12000
  • 4000:$0.2760
IRF9952TRPBF
DISTI # C1S322000487970
Infineon Technologies AGTrans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC T/R
RoHS: Compliant
9435
  • 250:$0.3431
  • 100:$0.3547
  • 25:$0.4893
  • 10:$0.4918
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von IRF9952TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,77 $
0,77 $
10
0,64 $
6,40 $
100
0,41 $
41,30 $
1000
0,33 $
331,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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