PartNumber | IRF9952PBF | IRF9952QTRPBF | IRF9952 |
Description | MOSFET 30V DUAL N / P CH 20V VGS MAX | MOSFET AUTO HEXFET SO-8 | MOSFET N/P-CH 30V 8-SOIC |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | IC Chips |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 3.5 A | 3.5 A | - |
Rds On Drain Source Resistance | 150 mOhms | 150 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 6.9 nC | 6.9 nC | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2 W | 2 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | Tube |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | - |
Type | Power MOSFET | - | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Fall Time | 3 ns, 6.9 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8.8 ns, 14 ns | - | - |
Factory Pack Quantity | 95 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 13 ns, 20 ns | - | - |
Typical Turn On Delay Time | 6.2 ns, 9.7 ns | - | - |
Part # Aliases | SP001566518 | - | - |
Unit Weight | 0.019048 oz | 0.019048 oz | - |
Series | - | - | HEXFETR |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | N and P-Channel |
Power Max | - | - | 2W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 190pF @ 15V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 3.5A, 2.3A |
Rds On Max Id Vgs | - | - | 100 mOhm @ 2.2A, 10V |
Vgs th Max Id | - | - | 1V @ 250μA |
Gate Charge Qg Vgs | - | - | 14nC @ 10V |