IRF9953PBF

Mfr. #:: IRF9953PBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET 2P-CH 30V 2.3A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF9953PBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Infineon-Technologien

Produktkategorie: FETs - Arrays

Serie: HEXFETR

Verpackung: Alternative Verpackung für Tuben

Gewichtseinheit: 0.019048 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Dual

FET-Typ: 2 P-Channel (Dual)

Leistung max: 2W

Transistor-Typ: 2 P-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 190pF @ 15V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 2.3A

Rds-On-Max-Id-Vgs: 250 mOhm @ 1A, 10V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 12nC @ 10V

Pd-Verlustleistung: 2 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 6.9 ns

Anstiegszeit: 14 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: - 2.3 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Widerstand: 250 mOhms

Transistor-Polarität: P-Kanal

Typische-Ausschaltverzögerungszeit: 20 ns

Typische-Einschaltverzögerungszeit: 9.7 ns

Qg-Gate-Ladung: 6.9 nC

Kanal-Modus: Erweiterung

Tags: IRF9953, IRF995, IRF99, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9953PBF Beschreibung

***ied Electronics & Automation: MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-20V

***ure Electronics: IRF9953PBF: 30 V 2.3 A 250 mOhm SMT Hexfet Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dynamic dv/dt Rating; Fast Switching; Dual P-Channel MOSFET

***ernational Rectifier: -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET P-CH 30V 2.3A 8-Pin SOIC

***Components: MOSFET P-Channel 30V 2.3A SOIC8

***i-Key: MOSFET 2P-CH 30V 2.3A 8-SOIC

***ronik: 2xP-CH 30V 2,3A 250mOhm SO-8 RoHSconf

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-30V; Current, Id Cont:2.3A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:F9953; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm

***ment14 APAC: MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F9953; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF9953TRPBF DISTI # IRF9953PBFCT-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2738In Stock	1000:$0.4143 500:$0.5079 100:$0.6715 10:$0.8580 1:$0.9700
IRF9953TRPBF DISTI # IRF9953PBFDKR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2738In Stock	1000:$0.4143 500:$0.5079 100:$0.6715 10:$0.8580 1:$0.9700
IRF9953PBF DISTI # IRF9953PBF-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 3800 Container: Tube	Limited Supply - Call
IRF9953TRPBF DISTI # IRF9953PBFTR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.3683
IRF9953PBF-EL DISTI # IRF9953PBF-EL	Infineon Technologies AG	Trans MOSFET P-CH 30V 2.3A 8-Pin SO Tube (Alt: IRF9953PBF-EL) RoHS: Compliant Min Qty: 95 Container: Tube	Europe - 0
IRF9953PBF DISTI # 97K2255	Infineon Technologies AG	MOSFET Transistor, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V RoHS Compliant: Yes	0
IRF9953PBF DISTI # 942-IRF9953PBF	Infineon Technologies AG	MOSFET DUAL -30V P-CH 20V VGS MAX RoHS: Compliant	0
IRF9953PBF	International Rectifier	INSTOCK	130
IRF9953PBF DISTI # 9102230	Infineon Technologies AG	MOSFET, DUAL, PP, LOGIC, SO-8 RoHS: Compliant	0	1:$1.4400 10:$1.1800 100:$0.9280 1000:$0.7800 2000:$0.6870

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRF9953TRPBF OMO.#: OMO-IRF9953TRPBF	MOSFET MOSFT DUAL PCh -30V 2.3A
	Mfr.#: IRF9952QTRPBF OMO.#: OMO-IRF9952QTRPBF	MOSFET AUTO HEXFET SO-8
	Mfr.#: IRF9910TR OMO.#: OMO-IRF9910TR-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 10A 8-SOIC
	Mfr.#: IRF9956PBF OMO.#: OMO-IRF9956PBF-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 30V 3.5A 8-SOIC
	Mfr.#: IRF9910PBF-1 OMO.#: OMO-IRF9910PBF-1-1190	Neu und Original
	Mfr.#: IRF9952 OMO.#: OMO-IRF9952-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 30V 8-SOIC
	Mfr.#: IRF9952Q OMO.#: OMO-IRF9952Q-1190	Neu und Original
	Mfr.#: IRF9952QTRPBF OMO.#: OMO-IRF9952QTRPBF-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 30V 8-SOIC
	Mfr.#: IRF9953TR OMO.#: OMO-IRF9953TR-INFINEON-TECHNOLOGIES	MOSFET 2P-CH 30V 2.3A 8-SOIC
	Mfr.#: IRF9953TRPBF OMO.#: OMO-IRF9953TRPBF-INFINEON-TECHNOLOGIES	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von IRF9953PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF9953PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes