IRF9953

IRF9953TRPBF vs IRF9953PBF vs IRF9953S

 
PartNumberIRF9953TRPBFIRF9953PBFIRF9953S
DescriptionMOSFET MOSFT DUAL PCh -30V 2.3AMOSFET DUAL -30V P-CH 20V VGS MAX
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current2.3 A2.3 A-
Rds On Drain Source Resistance165 mOhms250 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge6.9 nC6.9 nC-
Pd Power Dissipation2 W2 W-
ConfigurationDualDual-
PackagingReelTube-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type2 P-Channel2 P-Channel-
Width3.9 mm3.9 mm-
BrandInfineon / IRInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity400095-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001555962SP001565680-
Unit Weight0.019048 oz0.019048 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-Power MOSFET-
Fall Time-6.9 ns-
Rise Time-14 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-9.7 ns-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF9953TRPBF MOSFET MOSFT DUAL PCh -30V 2.3A
IRF9953PBF MOSFET DUAL -30V P-CH 20V VGS MAX
IRF9953TRPBF-CUT TAPE Neu und Original
IRF9953S Neu und Original
Infineon Technologies
Infineon Technologies
IRF9953 MOSFET 2P-CH 30V 2.3A 8-SOIC
IRF9953PBF MOSFET 2P-CH 30V 2.3A 8-SOIC
IRF9953TR MOSFET 2P-CH 30V 2.3A 8-SOIC
IRF9953TRPBF Neu und Original
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