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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK6E2R0-30C,127 DISTI # 1727-5886-ND | Nexperia | MOSFET N-CH 30V 120A I2PAK Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| BUK6E2R0-30C127 DISTI # BUK6E2R0-30C127 | Avnet, Inc. | - Bulk (Alt: BUK6E2R0-30C127) Min Qty: 338 Container: Bulk | Americas - 0 |
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| BUK6E2R0-30C127 | NXP Semiconductors | Now Nexperia BUK6E2R0-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 4728 |
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| Bild | Teil # | Beschreibung |
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Mfr.#: BUK6E2R0-30C127 OMO.#: OMO-BUK6E2R0-30C127-1190 |
Now Nexperia BUK6E2R0-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: BUK6E2R3-40C OMO.#: OMO-BUK6E2R3-40C-1190 |
Neu und Original |
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Mfr.#: BUK6E2R3-40C127 OMO.#: OMO-BUK6E2R3-40C127-1190 |
Now Nexperia BUK6E2R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: BUK6E2R3-40C,127 |
MOSFET N-CHAN 40V 120A |
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Mfr.#: BUK6E2R0-30C,127 |
MOSFET N-CHAN 30V 120A |
