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RS1E280GNTB

RS1E280GNTB
Mfr. #:
RS1E280GNTB
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET N-CH 30V 28A 8-HSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RS1E280GNTB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
ROHM Halbleiter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
RS1E280GN
Verpackung
Spule
Gewichtseinheit
0.002490 oz
Montageart
SMD/SMT
Paket-Koffer
HSOP-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
18 ns
Anstiegszeit
12.3 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
28 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Widerstand
2.6 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
61.3 ns
Typische-Einschaltverzögerungszeit
19.9 ns
Qg-Gate-Ladung
36 nC
Vorwärts-Transkonduktanz-Min
29 S
Tags
RS1E280, RS1E28, RS1E2, RS1E, RS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 28A Automotive 8-Pin HSOP EP T/R
***et
4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE
***nell
MOSFET, N-CH, 30V, 80A, HSOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 31W; Transistor Case Style: HSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ure Electronics
N-Channel 30 V 42 A 2.4 mOhm Surface Mount PowerTrench® SyncFETTM - Power56
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ
***r Electronics
Power Field-Effect Transistor, 26A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.
***ure Electronics
N-Channel 30 V 2.5 mOhm 41 W Surface Mount Power Trench - Power 33
***r Electronics
Power Field-Effect Transistor, 40A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8
***p One Stop
Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
N-Channel 30 V 3 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
RS1E280GNTB
DISTI # 30592379		ROHM SemiconductorTrans MOSFET N-CH 30V 28A 8-Pin HSOP EP T/R
RoHS: Compliant		100
  • 49:$0.5279
RS1E280GNTB
DISTI # RS1E280GNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 28A 8-HSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4889In Stock
  • 1000:$0.3878
  • 500:$0.4912
  • 100:$0.5946
  • 10:$0.7630
  • 1:$0.8500
RS1E280GNTB
DISTI # RS1E280GNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 28A 8-HSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4889In Stock
  • 1000:$0.3878
  • 500:$0.4912
  • 100:$0.5946
  • 10:$0.7630
  • 1:$0.8500
RS1E280GNTB
DISTI # RS1E280GNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 28A 8-HSOP
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3514
RS1E280GNTB
DISTI # RS1E280GNTB		ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E280GNTB)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3969
  • 5000:$0.3719
  • 10000:$0.3499
  • 15000:$0.3309
  • 25000:$0.3219
RS1E280GNTB
DISTI # RS1E280GNTB		ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE (Alt: RS1E280GNTB)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.6479
  • 10:€0.5759
  • 25:€0.5189
  • 50:€0.4709
  • 100:€0.4319
  • 500:€0.3989
  • 1000:€0.3699
RS1E280GNTB
DISTI # 755-RS1E280GNTB		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant		2772
  • 1:$0.8200
  • 10:$0.7030
  • 100:$0.5400
  • 500:$0.4770
  • 1000:$0.3770
  • 2500:$0.3340
  • 10000:$0.3220
  • 25000:$0.3120
RS1E280GNTBROHM Semiconductor 80
  • 49:$1.3860
  • 14:$1.5750
  • 1:$2.5200
RS1E280GNTB  115
    RS1E280GNTBROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant    		Americas -
      RS1E280GNTB
      DISTI # 2706648      		ROHM SemiconductorMOSFET, N-CH, 30V, 80A, HSOP
      RoHS: Compliant      		40
      • 500:£0.3280
      • 250:£0.3490
      • 100:£0.3710
      • 25:£0.4910
      • 5:£0.5420
      RS1E280GNTB
      DISTI # 2706648      		ROHM SemiconductorMOSFET, N-CH, 30V, 80A, HSOP
      RoHS: Compliant      		40
      • 500:$0.7300
      • 100:$0.9410
      • 10:$1.1900
      • 1:$1.3400
      RS1E280GNTBROHM SemiconductorRoHS(ship within 1day)100
      • 1:$1.7500
      • 10:$1.3200
      • 50:$0.8800
      • 100:$0.7000
      • 500:$0.6600
      • 1000:$0.6300
      Bild Teil # Beschreibung
      RS1E281BNTB1

      Mfr.#: RS1E281BNTB1

      OMO.#: OMO-RS1E281BNTB1

      		 MOSFET NCH 30V 80A POWER
      RS1E280BNTB

      Mfr.#: RS1E280BNTB

      OMO.#: OMO-RS1E280BNTB

      		 MOSFET 4.5V Drive Nch MOSFET
      RS1E240BNTB

      Mfr.#: RS1E240BNTB

      OMO.#: OMO-RS1E240BNTB

      		 MOSFET 4.5V Drive Nch MOSFET
      RS1E220ATTB1

      Mfr.#: RS1E220ATTB1

      OMO.#: OMO-RS1E220ATTB1

      		 MOSFET PCH -30V -76A POWER
      RS1E200BNFU7TB1

      Mfr.#: RS1E200BNFU7TB1

      OMO.#: OMO-RS1E200BNFU7TB1-1190

      		 Neu und Original
      RS1E200GNTB

      Mfr.#: RS1E200GNTB

      OMO.#: OMO-RS1E200GNTB-ROHM-SEMI

      		 MOSFET N-CH 30V 20A 8-HSOP
      RS1E240BNTB

      Mfr.#: RS1E240BNTB

      OMO.#: OMO-RS1E240BNTB-ROHM-SEMI

      		 MOSFET N-CH 30V 24A 8HSOP
      RS1E280BN

      Mfr.#: RS1E280BN

      OMO.#: OMO-RS1E280BN-1190

      		 Neu und Original
      RS1E280GN

      Mfr.#: RS1E280GN

      OMO.#: OMO-RS1E280GN-1190

      		 Neu und Original
      RS1E280GNTB

      Mfr.#: RS1E280GNTB

      OMO.#: OMO-RS1E280GNTB-ROHM-SEMI

      		 MOSFET N-CH 30V 28A 8-HSOP
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von RS1E280GNTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,47 $
      0,47 $
      10
      0,44 $
      4,45 $
      100
      0,42 $
      42,12 $
      500
      0,40 $
      198,90 $
      1000
      0,37 $
      374,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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