FDT86102LZ

Mfr. #:: FDT86102LZ
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 100V 6.6A SOT-223
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDT86102LZ Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: FDT86102LZ Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Fairchi

Produktkategorie: FETs - Einzeln

Serie: PowerTrenchR

Verpackung: Digi-ReelR Alternative Verpackung

Gewichtseinheit: 0.008826 oz

Montageart: SMD/SMT

Paket-Koffer: TO-261-4, TO-261AA

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: SOT-223-4

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 1W

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 100V

Eingangskapazität-Ciss-Vds: 1490pF @ 50V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 6.6A (Ta)

Rds-On-Max-Id-Vgs: 28 mOhm @ 6.6A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Lade-Qg-Vgs: 25nC @ 10V

Pd-Verlustleistung: 2.2 W

Maximale-Betriebstemperatur: + 150 C

ID-Dauer-Drain-Strom: 6.6 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Widerstand: 28 mOhms

Transistor-Polarität: N-Kanal

Qg-Gate-Ladung: 17 nC

Vorwärts-Transkonduktanz-Min: 26 S

Tags: FDT86102, FDT8610, FDT861, FDT8, FDT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDT86102LZ Beschreibung

***ure Electronics: N-Channel 100 V 6.6 A 28 mOhm PowerTrench® Mosfet - SOT-223

***Semiconductor: N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ

***et Europe: Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

***ment14 APAC: MOSFET, N CH, 100V, 6.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:40A; Voltage Vgs th Max:3V

FDT86102LZ Mehr Informationen

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

N-Channel PowerTrench® MOSFETs: ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDT86102LZ DISTI # FDT86102LZFSTR-ND	ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.7425
FDT86102LZ DISTI # FDT86102LZFSCT-ND	ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8214 500:$0.9914 100:$1.2746 10:$1.5860 1:$1.7600
FDT86102LZ DISTI # FDT86102LZFSDKR-ND	ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8214 500:$0.9914 100:$1.2746 10:$1.5860 1:$1.7600
FDT86102LZ DISTI # FDT86102LZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86102LZ) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
FDT86102LZ DISTI # FDT86102LZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86102LZ) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.6529 8000:$0.6489 16000:$0.6409 24000:$0.6319 40000:$0.6169
FDT86102LZ DISTI # 27T6450	ON Semiconductor	MOSFET Transistor, N Channel, 6.6 A, 100 V, 0.022 ohm, 10 V, 1.4 V	0	1:$0.6750 4000:$0.6630 8000:$0.6500 16000:$0.6250 24000:$0.6020 40000:$0.6000
FDT86102LZ. DISTI # 29AC6323	Fairchild Semiconductor Corporation	FET 100V 28.0 MOHM SOT223 ROHS COMPLIANT: YES	0	1:$0.6750 4000:$0.6630 8000:$0.6500 16000:$0.6250 24000:$0.6020 40000:$0.6000
FDT86102LZ DISTI # 512-FDT86102LZ	ON Semiconductor	MOSFET 100V N-Channel PowerTrench MOSFET RoHS: Compliant	0	1:$1.4800 10:$1.2500 100:$1.0000 500:$0.8760 1000:$0.7250 4000:$0.6510

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDT86246L OMO.#: OMO-FDT86246L	MOSFET 150V 2A N-Channel Power Trench MOSFET
	Mfr.#: FDT86246 OMO.#: OMO-FDT86246	MOSFET 150V N-Channel PowerTrench MOSFET
	Mfr.#: FDT86102LZ OMO.#: OMO-FDT86102LZ	MOSFET 100V N-Channel PowerTrench MOSFET
	Mfr.#: FDT86244 OMO.#: OMO-FDT86244	MOSFET 150V N-Channel PowerTrench MOSFET
	Mfr.#: FDT86256 OMO.#: OMO-FDT86256	MOSFET 150V NCh MOSFET PowerTrench
	Mfr.#: FDT86102 OMO.#: OMO-FDT86102-1190	Neu und Original
	Mfr.#: FDT86102LZ OMO.#: OMO-FDT86102LZ-ON-SEMICONDUCTOR	MOSFET N-CH 100V 6.6A SOT-223
	Mfr.#: FDT86106 OMO.#: OMO-FDT86106-1190	Neu und Original
	Mfr.#: FDT86113LZFAI OMO.#: OMO-FDT86113LZFAI-1190	Neu und Original
	Mfr.#: FDT86256 OMO.#: OMO-FDT86256-ON-SEMICONDUCTOR	MOSFET N-CH 150V 1.2A SOT-223-4

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von FDT86102LZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,90 $~~; ~~0,90 $~~

10: ~~0,86 $~~; ~~8,55 $~~

100: ~~0,81 $~~; ~~81,00 $~~

500: ~~0,76 $~~; ~~382,50 $~~

1000: ~~0,72 $~~; ~~720,00 $~~

Beginnen mit

FDT86102 3
FDT8610 5
FDT861 7
FDT8 12
FDT 103

FDT86102LZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes