IPB023N04N G

Mfr. #:: IPB023N04N G
Hersteller:: Infineon Technologies AG
Beschreibung:: IGBT Transistors MOSFET N-Ch 40V 90A D2PAK-2
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB023N04N G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IPB023N04NG, IPB023N04, IPB023, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB023N04N G Beschreibung

***et: Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-263

***i-Key: N-CHANNEL POWER MOSFET

***S: new, original packaged

***el Nordic: Contact for details

***ment14 APAC: MOSFET, N CH, 90A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:167W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ical: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R

***emi: 40V N-Channel PowerTrench® MOSFET

***ark: N CHANNEL MOSFET, 40V, 80A TO-263AB, FULL REEL

***et: TRANS MOSFET N-CH 40V 80A 3PIN TO-263AB

***Yang: MOSFET N-CH 40V 28A/80A TO263AB

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:254W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:254W; Power Dissipation Pd:254W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:2.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***emi: N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.6mΩ

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,80A I(D),TO-263AB

***Yang: Trans MOSFET N-CH 30V 31A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 31A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ical: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ

***ure Electronics: N-Channel 40 V 120 A 2.5 mohm Surface Mount PowerTrench® Mosfet - TO-263AB

***r Electronics: Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):0.0019ohm; Rds(on) Test Voltage, Vgs:2.8V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-263; Capacitance Ciss Typ:15000pF; Current Id Max:28A; Fall Time tf:17.9ns; Junction Temperature Tj Max:175°C; No. of Transistors:1; Package / Case:D2-PAK; Pin Format:G,D,S; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:52ns; Rise Time:24ns; SMD Marking:FDB8441; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***et: Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-263

***i-Key: N-CHANNEL POWER MOSFET

***ment14 APAC: MOSFET, N CH, 50A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ical: Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N CH, 70A, 30V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 40 V 1.1 mOhm 188 nC OptiMOS Power Mosfet - D2PAK-7

***p One Stop: Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO263-7, RoHS

***ment14 APAC: MOSFET, N CH, 180A, 40V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB023N04NGATMA1 DISTI # IPB023N04NGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB023N04NGATMA1 DISTI # IPB023N04NGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB023N04NGATMA1 DISTI # IPB023N04NGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB023N04N G DISTI # 726-IPB023N04NG	Infineon Technologies AG	MOSFET N-Ch 40V 90A D2PAK-2 RoHS: Compliant	0
IPB023N04NG	Infineon Technologies AG	Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	1510	1000:$0.9100 500:$0.9600 100:$1.0000 25:$1.0400 1:$1.1200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB023N04N OMO.#: OMO-IPB023N04N-1190	Neu und Original
	Mfr.#: IPB023N04NG OMO.#: OMO-IPB023N04NG-1190	Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB023N04NGATMA1 OMO.#: OMO-IPB023N04NGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 90A TO263-3
	Mfr.#: IPB023N04NGS OMO.#: OMO-IPB023N04NGS-1190	Neu und Original
	Mfr.#: IPB023N06N3 OMO.#: OMO-IPB023N06N3-1190	Neu und Original
	Mfr.#: IPB023N06N3G OMO.#: OMO-IPB023N06N3G-1190	140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
	Mfr.#: IPB023N06N3GATMA1 OMO.#: OMO-IPB023N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 140A TO263-7
	Mfr.#: IPB023N06N3 G OMO.#: OMO-IPB023N06N3-G-126	IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6
	Mfr.#: IPB023N04N G OMO.#: OMO-IPB023N04N-G-126	IGBT Transistors MOSFET N-Ch 40V 90A D2PAK-2

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von IPB023N04N G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IPB023N04NG 4
IPB023N04 5
IPB023 9
IPB02 68
IPB0 405
IPB 1339

IPB023N04N G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes