IRF1404STRLPBF

Mfr. #:: IRF1404STRLPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT 40V 162A 4mOhm 160nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF1404STRLPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF1404STRLPBF Datasheet IRF1404STRLPBF Datasheet (P4-P6)IRF1404STRLPBF Datasheet (P7-P9)IRF1404STRLPBF Datasheet (P10-P11)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 40 V

Id - Kontinuierlicher Drainstrom:: 162 A

Rds On - Drain-Source-Widerstand:: 3.5 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 160 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 200 W

Aufbau:: Single

Verpackung:: Spule

Höhe:: 4.4 mm

Länge:: 10 mm

Transistortyp:: 1 N-Channel

Breite:: 9.25 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 106 S

Abfallzeit:: 26 ns

Produktart:: MOSFET

Anstiegszeit:: 140 ns

Werkspackungsmenge:: 800

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 72 ns

Typische Einschaltverzögerungszeit:: 17 ns

Teil # Aliase:: SP001570024

Gewichtseinheit:: 0.139332 oz

Tags: IRF1404ST, IRF1404S, IRF1404, IRF140, IRF14, IRF1, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1404STRLPBF Beschreibung

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;D2Pak;PD 200W;VGS +/-20V

***ure Electronics: Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, 40V, 162A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 162A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power D

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 40 V 3.6 mOhm 200 nC Surface Mount HEXFET® Power Mosfet - D2PAK

***Yang: Trans MOSFET N-CH 40V 170A 3-Pin(2+Tab) D2PAK T/R - Rail/Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 40V, 170A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:170A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3.6mohm; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:850A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.6V

***ure Electronics: Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***(Formerly Allied Electronics): Power MOSFET,N-Ch,VDSS 40V,RDS(ON) 2.7 Milliohms,ID 200A,D2Pak,PD 230W,VGS+/-16V

***ical: Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, N, 40V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipa

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***Yang: Trans MOSFET N-CH 30V 23A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET, 30V, 160A, 3.9mΩ

***r Electronics: Power Field-Effect Transistor, 23A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: N-Channel 40 V 3.7 mOhm Surface Mount STripFET II Mosfet - D2PAK

***ical: Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 40V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

***icroelectronics: N-channel 40 V, 0.0043 Ohm typ., 120 A StripFET II Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: STB100 Series 40 V 120 A 4.6 mOhm 300 W 110 nC N-Channel MOSFET - D2PAK

***nell: MOSFET, N CH, 40V, 120A, 0R0043, TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vg

***ure Electronics: Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***Yang: Trans MOSFET N-CH 40V 250A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

*** Stop Electro: Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 40V, 195A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): AUIRFS8407 N-channel MOSFET Transistor; 195 A; 250 A; 40 V; 3-Pin D2PAK

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 40V 250A Automotive 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, 40V, 195A, Q101, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Battery Switch; Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; PTC Heater; Relay Replacement

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 40 V 0.004 Ohm 140 nC HEXFET® Power Mosfet - TO-262-3

***nell: MOSFET, N, 40V, 160A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power D

***el Electronic: VISHAY SQM120N04-1M9-GE3MOSFET Transistor, N Channel, 120 A, 40 V, 0.0015 ohm, 10 V, 3 V

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 30V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited

***icroelectronics: Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package

***Yang: Transistor MOSFET N-CH 40V 200A 3-Pin H2PAK-2 T/R - Tape and Reel

*** Electronics: STMICROELECTRONICS STH410N4F7-2AG MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V

***ment14 APAC: MOSFET, N-CH, 40V, 200A, H2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Source Voltage Vds:40V; On Resistance

***nell: MOSFET, N-CH, 40V, 200A, H2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 365W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF1404STRLPBF DISTI # V36:1790_13890823	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R	800	9600:$0.8270 4800:$0.9189 2400:$1.0209 800:$1.1344
IRF1404STRLPBF DISTI # V72:2272_13890823	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R	755	500:$1.2612 250:$1.3936 100:$1.4249 25:$1.6999 10:$1.7201 1:$1.9536
IRF1404STRLPBF DISTI # IRF1404STRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 40V 162A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1225In Stock	100:$2.0713 10:$2.5780 1:$2.8500
IRF1404STRLPBF DISTI # IRF1404STRLPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 162A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1225In Stock	100:$2.0713 10:$2.5780 1:$2.8500
IRF1404STRLPBF DISTI # IRF1404STRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 40V 162A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	800:$1.4121
IRF1404STRLPBF DISTI # 31312101	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R	3200	800:$1.5655
IRF1404STRLPBF DISTI # 30573544	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R	800	800:$1.2290
IRF1404STRLPBF DISTI # 31334993	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R	755	500:$1.2612 250:$1.4154 100:$1.4250 25:$1.7000 10:$1.7203 8:$1.9539
IRF1404STRLPBF DISTI # 30609484	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R	150	100:$1.8105 50:$1.8998 10:$2.3077 7:$4.1182
IRF1404STRLPBF DISTI # IRF1404STRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 162A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1404STRLPBF) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$0.9359 1600:$0.9019 3200:$0.8699 4800:$0.8399 8000:$0.8249
IRF1404STRLPBF DISTI # 32AC7468	Infineon Technologies AG	MOSFET, N-CH, 40V, 162A TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:162A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	480	1:$2.6600 10:$2.2800 25:$2.1400 50:$2.0000 100:$1.8600 250:$1.7600 500:$1.6500
IRF1404STRLPBF DISTI # 70017649	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 0.0035Ohm,ID 162A,D2Pak,PD 200W,VGS +/-20V RoHS: Compliant	0	800:$4.7200
IRF1404STRLPBF DISTI # 942-IRF1404STRLPBF	Infineon Technologies AG	MOSFET MOSFT 40V 162A 4mOhm 160nC RoHS: Compliant	978	1:$2.5300 10:$2.1500 100:$1.7200 500:$1.5100 800:$1.2500
IRF1404STRLPBF	International Rectifier	RoHS: Not Compliant	1600	1000:$0.7800 500:$0.8200 100:$0.8500 25:$0.8900 1:$0.9600
IRF1404STRLPBF DISTI # 9154935P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 40V 162A D2PAK, RL	555	25:£0.5780
IRF1404STRLPBF DISTI # IRF1404SPBF-GURT	Infineon Technologies AG	N-Ch 40V 162A 200W 0,004R DPak RoHS: Compliant	630	10:€1.0600 50:€0.7570 200:€0.6570 500:€0.6325
IRF1404STRLPBF	International Rectifier		804
IRF1404STRLPBF DISTI # 2777397	Infineon Technologies AG	MOSFET, N-CH, 40V, 162A TO-263 RoHS: Compliant	480	1:£1.0900 10:£0.9060 100:£0.8120 250:£0.7490 500:£0.6990
IRF1404STRLPBF DISTI # 2777397	Infineon Technologies AG	MOSFET, N-CH, 40V, 162A TO-263 RoHS: Compliant	480	5:$3.4300 25:$2.9900 100:$2.4400 250:$2.0600 500:$1.7800 1000:$1.6800 5000:$1.6000
IRF1404STRLPBF DISTI # C1S322000479175	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	150	100:$1.4200 50:$1.4900 10:$1.8100 1:$3.2300
IRF1404STRLPBF DISTI # C1S322000479157	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	755	250:$1.3968 100:$1.4593 25:$1.5503 10:$1.7225
IRF1404STRLPBF DISTI # C1S322000479166	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	3200	2400:$0.8700 1600:$0.9380 800:$1.2200

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von IRF1404STRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,39 $~~; ~~2,39 $~~

10: ~~2,03 $~~; ~~20,30 $~~

100: ~~1,62 $~~; ~~162,00 $~~

500: ~~1,42 $~~; ~~710,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF1404STRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes