IRF1404S

IRF1404STRLPBF vs IRF1404SPBF vs IRF1404STRR

 
PartNumberIRF1404STRLPBFIRF1404SPBFIRF1404STRR
DescriptionMOSFET MOSFT 40V 162A 4mOhm 160nCMOSFET 60V 1 N-CH HEXFET 4mOhms 160nCMOSFET N-CH 40V 162A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current162 A162 A-
Rds On Drain Source Resistance3.5 mOhms4 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge160 nC160 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation200 W200 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min106 S--
Fall Time26 ns26 ns-
Product TypeMOSFETMOSFET-
Rise Time140 ns140 ns-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time72 ns72 ns-
Typical Turn On Delay Time17 ns17 ns-
Part # AliasesSP001570024SP001570016-
Unit Weight0.139332 oz0.139332 oz-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF1404STRLPBF MOSFET MOSFT 40V 162A 4mOhm 160nC
IRF1404STRRPBF MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC
IRF1404SPBF MOSFET 60V 1 N-CH HEXFET 4mOhms 160nC
Infineon Technologies
Infineon Technologies
IRF1404STRR MOSFET N-CH 40V 162A D2PAK
IRF1404STRLPBF MOSFET N-CH 40V 162A D2PAK
IRF1404SPBF IGBT Transistors MOSFET 60V 1 N-CH HEXFET 4mOhms 160nC
IRF1404STRRPBF RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC
IRF1404S MOSFET Transistor, N-Channel, TO-263AB
IRF1404SPBF,IRF1404S Neu und Original
IRF1404STRPBF Neu und Original
IRF1404STRPBF. Neu und Original
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