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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| MRF6S20010GNR1 DISTI # 11962144 | NXP Semiconductors | Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R | 349 |
|
| MRF6S20010GNR1 DISTI # MRF6S20010GNR1CT-ND | NXP Semiconductors | FET RF 68V 2.17GHZ TO270-2 GW RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1311In Stock |
|
| MRF6S20010GNR1 DISTI # MRF6S20010GNR1DKR-ND | NXP Semiconductors | FET RF 68V 2.17GHZ TO270-2 GW RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1311In Stock |
|
| MRF6S20010GNR1 DISTI # MRF6S20010GNR1TR-ND | NXP Semiconductors | FET RF 68V 2.17GHZ TO270-2 GW RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR) | 1000In Stock |
|
| MRF6S20010GNR1 DISTI # MRF6S20010GNR1 | NXP Semiconductors | Trans MOSFET N-CH 68V 3-Pin TO-270 T/R (Alt: MRF6S20010GNR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel | Asia - 0 |
|
| MRF6S20010GNR1 DISTI # MRF6S20010GNR1 | NXP Semiconductors | Trans MOSFET N-CH 68V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRF6S20010GNR1) RoHS: Compliant Min Qty: 500 Container: Reel | Americas - 0 |
|
| MRF6S20010GNR1 DISTI # 61AC0767 | NXP Semiconductors | RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G,Drain Source Voltage Vds:68V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:2.2GHz,Operating Frequency Max:1.6GHz,RF Transistor Case:TO-270G,No. of Pins:2Pins,, RoHS Compliant: Yes | 479 |
|
| MRF6S20010GNR1 DISTI # 81K3163 | NXP Semiconductors | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) | 0 | |
| MRF6S20010GNR1 | NXP Semiconductors | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA RoHS: Compliant | 500 |
|
| MRF6S20010GNR1 | Freescale Semiconductor | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA RoHS: Compliant | 1382 |
|
| MRF6S20010GNR1 DISTI # 841-MRF6S20010GNR1 | NXP Semiconductors | RF MOSFET Transistors HV6 2GHZ 10W RoHS: Compliant | 229 |
|
| MRF6S20010GNR1 DISTI # MRF6S20010GNR1 | NXP Semiconductors | RF POWER TRANSISTOR RoHS: Compliant | 415 |
|
| MRF6S20010GNR1 DISTI # 2890603 | NXP Semiconductors | RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G RoHS: Compliant | 479 |
|
| MRF6S20010GNR1 DISTI # 2890603 | NXP Semiconductors | RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G RoHS: Compliant | 479 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: MRF6S20010GNR1 OMO.#: OMO-MRF6S20010GNR1 |
RF MOSFET Transistors HV6 2GHZ 10W |
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Mfr.#: MRF6S20010NR1 OMO.#: OMO-MRF6S20010NR1 |
RF MOSFET Transistors HV6 2GHZ 10W TO270-2 |
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Mfr.#: MRF6S20010GNR OMO.#: OMO-MRF6S20010GNR-1190 |
Neu und Original |
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Mfr.#: MRF6S20010NRI OMO.#: OMO-MRF6S20010NRI-1190 |
Neu und Original |
|
Mfr.#: MRF6S20010NR1 |
RF MOSFET Transistors HV6 2GHZ 10W TO270-2 |
|
Mfr.#: MRF6S20010GNR1 |
RF MOSFET Transistors HV6 2GHZ 10W |