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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2500In Stock |
|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2500In Stock |
|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4425BDY-T1-GE3 DISTI # 26R1875 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4425BDY-T1-GE3 DISTI # 15R5010 | Vishay Intertechnologies | P CH MOSFET,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):19mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes | 0 |
|
| SI4425BDY-T1-GE3. DISTI # 28AC2137 | Vishay Intertechnologies | Transistor Polarity:P Channel,Continuous Drain Current Id:8.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3mV,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
| SI4425BDY-T1-GE3 DISTI # 781-SI4425BDY-GE3 | Vishay Intertechnologies | MOSFET 30V 11.4A 2.5W 12mohm @ 10V RoHS: Compliant | 3960 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI4425BDY-T1-E3 OMO.#: OMO-SI4425BDY-T1-E3 |
MOSFET 30V 11A 2.5W |
|
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Mfr.#: SI4425BDY-T1-GE3 OMO.#: OMO-SI4425BDY-T1-GE3 |
MOSFET 30V 11.4A 2.5W 12mohm @ 10V |
|
Mfr.#: SI4425BDY-T1-GE3 OMO.#: OMO-SI4425BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 11.4A 2.5W 12mohm @ 10V |
|
Mfr.#: SI4425BDY-T1-E3-CUT TAPE |
Neu und Original |
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Mfr.#: SI4425BD , HZU18BTR OMO.#: OMO-SI4425BD-HZU18BTR-1190 |
Neu und Original |
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Mfr.#: SI4425BDY OMO.#: OMO-SI4425BDY-1190 |
Neu und Original |
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Mfr.#: SI4425BDY-T1 OMO.#: OMO-SI4425BDY-T1-1190 |
Neu und Original |
|
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Mfr.#: SI4425BDY-T1 E3 OMO.#: OMO-SI4425BDY-T1-E3-1190 |
Neu und Original |
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Mfr.#: SI4425BDY-T1-E3 OMO.#: OMO-SI4425BDY-T1-E3-VISHAY |
MOSFET P-CH 30V 8.8A 8-SOIC |
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Mfr.#: SI4425BDY-T1-E3. OMO.#: OMO-SI4425BDY-T1-E3--1190 |
FOR NEW DESIGNS USE SI4425DDY-T1-GE3 ROHS COMPLIANT: NO |