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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI4384DY-T1-E3 DISTI # V72:2272_09215554 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R RoHS: Compliant | 20 |
|
| SI4384DY-T1-E3 DISTI # SI4384DY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 10A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4384DY-T1-E3 DISTI # SI4384DY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 10A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI4384DY-T1-E3 DISTI # SI4384DY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 10A 8-SOIC Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI4384DY-T1-E3 DISTI # 25789844 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R RoHS: Compliant | 20 |
|
| SI4384DY-T1-E3 DISTI # 85W2145 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:3.1W,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI4384DY-T1-E3. DISTI # 30AC0154 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 15A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI4384DY-T1-E3 DISTI # 70026211 | Vishay Siliconix | MOSFET,N-Channel REDUCED QG,Fast Switching RoHS: Not Compliant | 0 |
|
| SI4384DY-T1-E3 | Vishay Intertechnologies | 2474 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SI4382DY-T1-E3 OMO.#: OMO-SI4382DY-T1-E3 |
MOSFET 30V 4.7mohm@10V |
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Mfr.#: SI4382DY-T1-GE3 OMO.#: OMO-SI4382DY-T1-GE3 |
MOSFET 30V 4.7mohm @ 10V |
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Mfr.#: SI4382DY-T1-E3 OMO.#: OMO-SI4382DY-T1-E3-317 |
RF Bipolar Transistors MOSFET 30V 4.7mohm@10V |
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Mfr.#: SI4382DY-T1-GE3 OMO.#: OMO-SI4382DY-T1-GE3-317 |
RF Bipolar Transistors MOSFET 30V 4.7mohm @ 10V |
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Mfr.#: SI4382DY-TI-E3 OMO.#: OMO-SI4382DY-TI-E3-1190 |
Neu und Original |