 | | | |
| PartNumber | SI4382DY-T1-E3 | SI4382DY-T1-GE3 | SI4384DY-T1-E3 |
| Description | MOSFET 30V 4.7mohm@10V | MOSFET 30V 4.7mohm @ 10V | MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Series | SI4 | SI4 | SI4 |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4382DY-E3 | SI4382DY-GE3 | SI4384DY-E3 |
| Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4386DY-T1-E3 | MOSFET 30V 16A 3.1W 7.0mohm @ 10V | |
| SI4386DY-T1-GE3 | MOSFET 30V 16A 3.1W 7.0mohm @ 10V | ||
| SI4382DY-T1-E3 | MOSFET 30V 4.7mohm@10V | ||
| SI4382DY-T1-GE3 | MOSFET 30V 4.7mohm @ 10V | ||
| SI4384DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 | ||
| SI4388DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 | ||
| SI4382DY-T1-E3 | RF Bipolar Transistors MOSFET 30V 4.7mohm@10V | ||
| SI4382DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 4.7mohm @ 10V | ||
| SI4382DY-TI-E3 | Neu und Original | ||
| SI4384DY-E3 | Neu und Original | ||
| SI4386 | Neu und Original | ||
| SI4386DY | Neu und Original | ||
| SI4386DY-T1 | Neu und Original | ||
| SI4386DYT1E3 | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI4388DY | Neu und Original | ||
Vishay |
SI4388DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 8.0/19A 3.3/3.5W 16/15mohm @ 10V | |
| SI4386DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 16A 3.1W 7.0mohm @ 10V | ||
| SI4384DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 15A 3.1W 8.5mohm @ 10V | ||
| SI4384DY-T1-E3 | MOSFET N-CH 30V 10A 8-SOIC | ||
| SI4388DY-T1-E3 | MOSFET 2N-CH 30V 10.7A 8-SOIC | ||
| SI4386DY-T1-E3 | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R |