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SI4386DY-T1-GE3

SI4386DY-T1-GE3
Mfr. #:
SI4386DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 30V 16A 3.1W 7.0mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4386DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4386DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI4386DY-T, SI4386D, SI4386, SI438, SI43, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***nell
N CHANNEL MOSFET, 30V, 16A, SOIC, FULL R
*** Americas
N-CH REDUCED QG, FAST SWITCHING MOSFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:16000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0095ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2V; Power Dissipation, Pd:1.47W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4386DY-T1-GE3
DISTI # SI4386DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.5116
SI4386DY-T1-GE3
DISTI # SI4386DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4386DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7549
  • 5000:$0.7319
  • 10000:$0.7029
  • 15000:$0.6829
  • 25000:$0.6649
SI4386DY-T1-GE3
DISTI # SI4386DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R (Alt: SI4386DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4386DY-T1-GE3
    DISTI # 781-SI4386DY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 16A 3.1W 7.0mohm @ 10V
    RoHS: Compliant    		2450
    • 1:$1.6200
    • 10:$1.3400
    • 100:$1.0400
    • 500:$0.9090
    • 1000:$0.7530
    • 2500:$0.7010
    • 5000:$0.6750
    • 10000:$0.6740
    SI4386DY-T1-GE3Vishay Intertechnologies 532
      SI4386DY-T1-GE3
      DISTI # 2478949      		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 16A, SOIC, FULL REEL
      RoHS: Compliant      		0
      • 2500:$0.9140
      SI4386DY-T1-GE3
      DISTI # 2478949      		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 16A, SOIC, FULL R
      RoHS: Compliant      		0
      • 2500:£0.6590
      • 5000:£0.5930
      • 7500:£0.5720
      Bild Teil # Beschreibung
      SI4386DY-T1-E3

      Mfr.#: SI4386DY-T1-E3

      OMO.#: OMO-SI4386DY-T1-E3

      		 MOSFET 30V 16A 3.1W 7.0mohm @ 10V
      SI4386DY-T1-GE3

      Mfr.#: SI4386DY-T1-GE3

      OMO.#: OMO-SI4386DY-T1-GE3

      		 MOSFET 30V 16A 3.1W 7.0mohm @ 10V
      SI4386DY-T1-GE3

      Mfr.#: SI4386DY-T1-GE3

      OMO.#: OMO-SI4386DY-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 30V 16A 3.1W 7.0mohm @ 10V
      SI4386DY

      Mfr.#: SI4386DY

      OMO.#: OMO-SI4386DY-1190

      		 Neu und Original
      SI4386DY-T1

      Mfr.#: SI4386DY-T1

      OMO.#: OMO-SI4386DY-T1-1190

      		 Neu und Original
      SI4386DYT1E3

      Mfr.#: SI4386DYT1E3

      OMO.#: OMO-SI4386DYT1E3-1190

      		 Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      SI4386DY-T1-E3

      Mfr.#: SI4386DY-T1-E3

      OMO.#: OMO-SI4386DY-T1-E3-VISHAY

      		 Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von SI4386DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,77 $
      0,77 $
      10
      0,73 $
      7,29 $
      100
      0,69 $
      69,06 $
      500
      0,65 $
      326,15 $
      1000
      0,61 $
      613,90 $
      Beginnen mit
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