 | | |
| PartNumber | SI4386DY-T1-E3 | SI4386DY-T1-GE3 |
| Description | MOSFET 30V 16A 3.1W 7.0mohm @ 10V | MOSFET 30V 16A 3.1W 7.0mohm @ 10V |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI4 | SI4 |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI4386DY-E3 | SI4386DY-GE3 |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4386DY-T1-E3 | MOSFET 30V 16A 3.1W 7.0mohm @ 10V | |
| SI4386DY-T1-GE3 | MOSFET 30V 16A 3.1W 7.0mohm @ 10V | ||
Vishay |
SI4386DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 16A 3.1W 7.0mohm @ 10V | |
| SI4386DY-T1-E3 | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R | ||
| SI4386DY | Neu und Original | ||
| SI4386DY-T1 | Neu und Original | ||
| SI4386DYT1E3 | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |