SI4386DY-T1-E3

Mfr. #:: SI4386DY-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 30V 16A 3.1W 7.0mohm @ 10V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4386DY-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4386DY-T1-E3 Datasheet SI4386DY-T1-E3 Datasheet (P4-P6)SI4386DY-T1-E3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:: SI4386DY-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI4

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Teil # Aliase:: SI4386DY-E3

Gewichtseinheit:: 0.006596 oz

Tags: SI4386DY-T, SI4386D, SI4386, SI438, SI43, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4386DY-T1-E3 Beschreibung

***ure Electronics: Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: N-Channel MOSFETs N-CH REDUCED QG FAST SWITCHING

SI4386DY-T1-E3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4386DY-T1-E3 DISTI # V72:2272_09215556	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R RoHS: Compliant	1865	1000:$0.6183 500:$0.6828 250:$0.8676 100:$0.8807 25:$1.0632 10:$1.0670 1:$1.1776
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6768In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6768In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	2500:$0.5116
SI4386DY-T1-E3 DISTI # 25789845	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R RoHS: Compliant	1865	1000:$0.6183 500:$0.6828 250:$0.8676 100:$0.8807 25:$1.0632 10:$1.0670
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4386DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5009 5000:$0.4989 10000:$0.4979 15000:$0.4969 25000:$0.4959
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R (Alt: SI4386DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4386DY-T1-E3 DISTI # 75M5463	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 16A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):7mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$0.8650 2500:$0.8650
SI4386DY-T1-E3 DISTI # 85W2146	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.6200 10:$1.3400 25:$1.2400 50:$1.1400 100:$1.0400 500:$0.9090 1000:$0.8660
SI4386DY-T1-E3. DISTI # 30AC0155	Vishay Intertechnologies	N-CH REDUCED QG, FAST SWITCHING MOSFET , ROHS COMPLIANT: YES	0	1:$0.8650 2500:$0.8650
SI4386DY-T1-E3 DISTI # 781-SI4386DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 16A 3.1W 7.0mohm @ 10V RoHS: Compliant	2817	1:$1.6200 10:$1.3400 100:$1.0400 500:$0.9090 1000:$0.8660 2500:$0.8650
SI4386DYT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2500
SI4386DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 16A 3.1W 7.0mohm @ 10V	Americas -
SI4386DY-T1-E3 DISTI # C1S803601003607	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1865	250:$0.8689 100:$0.8807 25:$1.0632 10:$1.0670

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von SI4386DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,64 $~~; ~~1,64 $~~

10: ~~1,36 $~~; ~~13,60 $~~

100: ~~1,06 $~~; ~~106,00 $~~

500: ~~0,93 $~~; ~~463,50 $~~

1000: ~~0,77 $~~; ~~768,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI4386DY-T 3
SI4386D 5
SI4386 6
SI438 15
SI43 161
SI4 2994

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SI4386DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes