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SIRA04DP-T1-GE3

SIRA04DP-T1-GE3
Mfr. #:
SIRA04DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 40A PPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIRA04DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIRA04DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIRA04, SIRA0, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8
***ure Electronics
Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***et Europe
Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R
***ark
N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes
***Components
MOSFET N-CH 30V 35.9A POWERPAK SO8
***an P&S
30V,40A,N-Channel MOSFET
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
***
N-CHANNEL 30-V (D-S)
***ment14 APAC
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:27.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIRA04DP-T1-GE3
DISTI # V36:1790_09216068		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant		0
  • 3000000:$0.5181
  • 1500000:$0.5183
  • 300000:$0.5305
  • 30000:$0.5498
  • 3000:$0.5529
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2885In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2885In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.5107
  • 6000:$0.5307
  • 3000:$0.5586
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA04DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
    SIRA04DP-T1-GE3
    DISTI # SIRA04DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4489
    • 18000:€0.4689
    • 12000:€0.5309
    • 6000:€0.6549
    • 3000:€0.9129
    SIRA04DP-T1-GE3
    DISTI # SIRA04DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SIRA04DP-T1-GE3
      DISTI # 70243884      		Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,40A,2.15mohm @ 10V,PowerPAK SO-8
      RoHS: Compliant      		0
      • 3000:$0.5720
      SIRA04DP-T1-GE3
      DISTI # 78-SIRA04DP-T1-GE3      		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		2992
      • 1:$1.3200
      • 10:$1.0900
      • 100:$0.8390
      • 500:$0.7220
      • 1000:$0.5690
      • 3000:$0.5310
      • 6000:$0.5050
      • 9000:$0.4860
      SIRA04DP-T1-GE3Vishay Intertechnologies 3962
        SIRA04DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		3000
          SIRA04DP-T1-GE3Vishay Intertechnologies30V,40A,N-Channel MOSFET2400
          • 1:$2.4500
          • 100:$0.9800
          • 500:$0.9100
          • 1000:$0.8800
          SIRA04DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8Americas -
            Bild Teil # Beschreibung
            SIRA04DP-T1-GE3

            Mfr.#: SIRA04DP-T1-GE3

            OMO.#: OMO-SIRA04DP-T1-GE3

            		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
            SIRA04DP-T1-GE3-CUT TAPE

            Mfr.#: SIRA04DP-T1-GE3-CUT TAPE

            OMO.#: OMO-SIRA04DP-T1-GE3-CUT-TAPE-1190

            		 Neu und Original
            SIRA04DP

            Mfr.#: SIRA04DP

            OMO.#: OMO-SIRA04DP-1190

            		 Neu und Original
            SIRA04DP-T1-GE3

            Mfr.#: SIRA04DP-T1-GE3

            OMO.#: OMO-SIRA04DP-T1-GE3-VISHAY

            		 MOSFET N-CH 30V 40A PPAK SO-8
            SIRA04DPT1GE3

            Mfr.#: SIRA04DPT1GE3

            OMO.#: OMO-SIRA04DPT1GE3-1190

            		 Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4500
            Menge eingeben:
            Der aktuelle Preis von SIRA04DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            0,80 $
            0,80 $
            10
            0,76 $
            7,58 $
            100
            0,72 $
            71,82 $
            500
            0,68 $
            339,15 $
            1000
            0,64 $
            638,40 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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