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| PartNumber | SIRA01DP-T1-GE3 | SIRA00DP-T1-GE3 | SIRA00DP-T1-RE3 |
| Description | MOSFET -30V Vds 16V Vgs PowerPAK SO-8 | MOSFET 30V 1mOhm@10V 60A N-Ch G-IV | MOSFET 30V Vds TrenchFET PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 60 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 4.9 mOhms | 830 uOhms | 830 uOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | 16 V, - 20 V | 20 V, - 16 V | 20 V, - 16 V |
| Qg Gate Charge | 56 nC | 220 nC | 220 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 62.5 W | 104 W | 104 W |
| Configuration | Single | Single | Single |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIR | SIR | SIR |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 10 ns | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns | 14 ns | 14 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 39 ns | 67 ns | 67 ns |
| Typical Turn On Delay Time | 15 ns | 18 ns | 18 ns |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 1.04 mm | - |
| Length | - | 6.15 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 5.15 mm | - |
| Forward Transconductance Min | - | 140 S | 140 S |
| Part # Aliases | - | SIRA00DP-GE3 | - |
| Unit Weight | - | 0.017870 oz | 0.017870 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRA01DP-T1-GE3 | MOSFET -30V Vds 16V Vgs PowerPAK SO-8 | |
| SIRA04DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA02DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA00DP-T1-GE3 | MOSFET 30V 1mOhm@10V 60A N-Ch G-IV | ||
| SIRA06DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRA00DP-T1-RE3 | MOSFET 30V Vds TrenchFET PowerPAK SO-8 | ||
| SIRA00DP-T1-GE3-CUT TAPE | Neu und Original | ||
| SIRA04DP-T1-GE3-CUT TAPE | Neu und Original | ||
| SIRA06DP-T1-GE3-CUT TAPE | Neu und Original | ||
| SIRA00DP | Neu und Original | ||
| SIRA00DP-TI-GE3 | Neu und Original | ||
| SIRA02 | Neu und Original | ||
| SIRA02DP | Neu und Original | ||
| SIRA04DP | Neu und Original | ||
| SIRA04DPT1GE3 | Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIRA06DP | Neu und Original | ||
| SIRA06DP-T1 | Neu und Original | ||
| SIRA06DP-T1-GE3 PB-FREE | Neu und Original | ||
| SIRA06DP-TE-GE3 | Neu und Original | ||
Vishay |
SIRA01DP-T1-GE3 | MOSFET P-CH 30V POWERPAK SO-8 | |
| SIRA00DP-T1-GE3 | MOSFET N-CH 30V 100A PPAK SO-8 | ||
| SIRA02DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK SO-8 | ||
| SIRA04DP-T1-GE3 | MOSFET N-CH 30V 40A PPAK SO-8 | ||
| SIRA06DP-T1-GE3 | MOSFET N-CH 30V 40A PPAK SO-8 | ||
| SIRA00DP-T1-RE3 | MOSFET N-CH 30V 100A POWERPAKSO |