OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

FQP7N80C

FQP7N80C
Mfr. #:
FQP7N80C
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Ch Q-FET advance C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP7N80C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
6.6 A
Rds On - Drain-Source-Widerstand:
1.9 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
167 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQP7N80C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
5.5 S
Abfallzeit:
60 ns
Produktart:
MOSFET
Anstiegszeit:
100 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
35 ns
Teil # Aliase:
FQP7N80C_NL
Gewichtseinheit:
0.063493 oz
Tags
FQP7N80C, FQP7N8, FQP7N, FQP7, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 6.6 A, 800 V, 3-Pin TO-220AB ON Semiconductor FQP7N80C
***Semiconductor
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220
***p One Stop Japan
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 800 V 1.9 Ohm Flange Mount Mosfet - TO-220-3
***i-Key
MOSFET N-CH 800V 6.6A TO-220
***ark
Qfc 800V 1.9Ohm To220 Rohs Compliant: Yes
***ser
MOSFETs 800V N-Ch Q-FET advance C-Series
***inecomponents.com
800V N-Channel Advance QFET® C-Series
***eco
3 LEAD PLASTIC W/EXPOSED HEATSNK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:6.6A; Resistance, Rds On:1.57ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:26.4A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:167W; Power, Pd:167W; Resistance, Rds on Max:1.9ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.9ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:26.4A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Teil # Mfg. Beschreibung Aktie Preis
FQP7N80C
DISTI # V36:1790_06359748		ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 5000:$0.7437
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 1:$1.7748
FQP7N80C
DISTI # FQP7N80C-ND		ON SemiconductorMOSFET N-CH 800V 6.6A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		389In Stock
  • 1000:$1.2106
  • 500:$1.4611
  • 100:$1.8785
  • 10:$2.3380
  • 1:$2.5900
FQP7N80C
DISTI # 30333733		ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 8:$1.7748
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 525
  • 1000:$0.9039
  • 2000:$0.8799
  • 4000:$0.8569
  • 6000:$0.8349
  • 10000:$0.8139
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1		Europe - 500
  • 1:€1.4339
  • 10:€1.1729
  • 25:€1.0029
  • 50:€0.9099
  • 100:€0.8959
  • 500:€0.8819
  • 1000:€0.8689
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000		Asia - 5000
  • 1000:$0.9900
  • 2000:$0.9519
  • 3000:$0.9167
  • 5000:$0.8839
  • 10000:$0.8535
  • 25000:$0.8250
  • 50000:$0.8115
FQP7N80C
DISTI # 97K0195		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6.6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.57ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:167W RoHS Compliant: Yes354
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C.
DISTI # 29AC6380		Fairchild Semiconductor CorporationQFC 800V 1.9OHM TO220 ROHS COMPLIANT: YES525
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C
DISTI # 512-FQP7N80C		ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Compliant		260
  • 1:$2.2300
  • 10:$1.8900
  • 100:$1.5100
  • 500:$1.3200
  • 1000:$1.1000
FQP7N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		11110
  • 1000:$1.1700
  • 500:$1.2300
  • 100:$1.2800
  • 25:$1.3400
  • 1:$1.4400
FQP7N80CFairchild Semiconductor Corporation 100
    FQP7N80C
    DISTI # 6715180P    		ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, TU1269
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80C
    DISTI # 6715180    		ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, PK75
    • 5:£1.4860
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80CFairchild Semiconductor Corporation6.6A, 800V, 1.9OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB49
      FQP7N80C
      DISTI # 1095073      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		354
      • 1:$3.5300
      • 10:$3.0000
      • 100:$2.4000
      • 500:$2.0900
      • 1000:$1.7500
      • 2000:$1.6200
      • 5000:$1.5700
      • 10000:$1.5100
      FQP7N80C
      DISTI # C1S541901511605      		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		8600
      • 1000:$0.8717
      • 500:$1.0330
      • 100:$1.2926
      • 10:$1.5603
      FQP7N80C
      DISTI # 1095073      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		358
      • 1:£1.5900
      • 10:£1.2200
      • 100:£0.9440
      • 250:£0.8850
      • 500:£0.8250
      Bild Teil # Beschreibung
      EPCQ64ASI16N

      Mfr.#: EPCQ64ASI16N

      OMO.#: OMO-EPCQ64ASI16N

      		 FPGA - Configuration Memory
      TPS75003RHLR

      Mfr.#: TPS75003RHLR

      OMO.#: OMO-TPS75003RHLR

      		 Power Management Specialized - PMIC Integ 3-Supply Power Mngmnt IC
      6KA24HE3_A/C

      Mfr.#: 6KA24HE3_A/C

      OMO.#: OMO-6KA24HE3-A-C

      		 TVS Diodes / ESD Suppressors 6KW,24V 10%,AXIAL AEC-Q101 Qualified
      SN75176BDR

      Mfr.#: SN75176BDR

      OMO.#: OMO-SN75176BDR

      		 RS-422/RS-485 Interface IC Differential Bus
      RHRD660S9A

      Mfr.#: RHRD660S9A

      OMO.#: OMO-RHRD660S9A

      		 Diodes - General Purpose, Power, Switching 6A 600V HyperFast Diode
      FQPF7N80C

      Mfr.#: FQPF7N80C

      OMO.#: OMO-FQPF7N80C

      		 MOSFET 800V N-Ch Q-FET advance C-Series
      ICE3BR4765J

      Mfr.#: ICE3BR4765J

      OMO.#: OMO-ICE3BR4765J

      		 AC/DC Converters COOLSET F3 650V
      SI7006-A20-IM

      Mfr.#: SI7006-A20-IM

      OMO.#: OMO-SI7006-A20-IM

      		 Board Mount Humidity Sensors Digital I2C 4% RH + temp sensor
      TEPT5700

      Mfr.#: TEPT5700

      OMO.#: OMO-TEPT5700

      		 Ambient Light Sensors Ambient Light Sensor
      5GTH935

      Mfr.#: 5GTH935

      OMO.#: OMO-5GTH935

      		 Tactile Switches 50mA 24VDC 3.5N ThruHole IP67
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von FQP7N80C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,23 $
      2,23 $
      10
      1,89 $
      18,90 $
      100
      1,51 $
      151,00 $
      500
      1,32 $
      660,00 $
      1000
      1,10 $
      1 100,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      • FAN6224 SR Controller
        FAN6224 SR Controller
        FAN6224 is the first SR high- and low-side controller device in ON Semiconductor's mWSaver™ technology series.
      • Bluetooth® Low Energy Switch
        Bluetooth® Low Energy Switch
        ON Semiconductor's energy harvesting Bluetooth® Low Energy switch is a complete reference design for energy harvesting applications.
      • NCP716B Linear Voltage Regulator
        NCP716B Linear Voltage Regulator
        ON Semiconductor's NCP716B is a 150 mA LDO linear voltage regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range)
      • Compare FQP7N80C
        Compare FQP7N80C
        FQP7N80C vs FQP7N80C7N80C vs FQP7N80CFQP7N807N80
      • LB1846MC Motor Driver IC
        LB1846MC Motor Driver IC
        The LB1846MC is a low-voltage/low saturation voltage type bidirectional motor driver that is optimal for use as a 2-phase stepping motor driver.
      • MEMS Motion Tracking Modules
        MEMS Motion Tracking Modules
        ON Semiconductor's FMT1000 series are industrial grade module family includes accelerometers, gyroscopes, magnetometers, 10 ppm crystal, and a dedicated MCU.
      More Newest Products
      Top