FQP7N8 stock, FQP7N8, FQP7N80C


PartNumber	FQP7N80C	FQP7N80
Description	MOSFET 800V N-Ch Q-FET advance C-Series	MOSFET NCh/800V/6.6a/1.5Ohm
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	800 V	800 V
Id Continuous Drain Current	6.6 A	6.6 A
Rds On Drain Source Resistance	1.9 Ohms	1.5 Ohms
Vgs Gate Source Voltage	30 V	30 V
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	167 W	167 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	QFET	-
Packaging	Tube	Tube
Height	16.3 mm	16.3 mm
Length	10.67 mm	10.67 mm
Series	FQP7N80C	-
Transistor Type	1 N-Channel	1 N-Channel
Type	MOSFET	MOSFET
Width	4.7 mm	4.7 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Forward Transconductance Min	5.5 S	5 S
Fall Time	60 ns	55 ns
Product Type	MOSFET	MOSFET
Rise Time	100 ns	80 ns
Factory Pack Quantity	1000	50
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	50 ns	95 ns
Typical Turn On Delay Time	35 ns	35 ns
Part # Aliases	FQP7N80C_NL	FQP7N80_NL
Unit Weight	0.063493 oz	0.050717 oz

Search Part Number : "FQP7N8", Match & Start with "FQP7N8" - Total : 9

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	FQP7N80C	MOSFET 800V N-Ch Q-FET advance C-Series
ON Semiconductor / Fairchild	FQP7N80	MOSFET NCh/800V/6.6a/1.5Ohm
ON Semiconductor	FQP7N80	MOSFET N-CH 800V 6.6A TO-220
ON Semiconductor	FQP7N80C	Darlington Transistors MOSFET 800V N-Ch Q-FET advance C-Series
	FQP7N80C,7N80C,	Neu und Original
	FQP7N80C,FQP7N80,7N80	Neu und Original
	FQP7N80C,FQPF7N80C,P7N80	Neu und Original
	FQP7N80C-TU	Neu und Original
	FQP7N80C/8N80C	Neu und Original

FQP7N8