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IRF9362PBF

IRF9362PBF
Mfr. #:
IRF9362PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 2P-CH 30V 8A 8SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF9362PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9362PBF DatasheetIRF9362PBF Datasheet (P4-P6)IRF9362PBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
HEXFETR
Verpackung
Alternative Verpackung für Tuben
Gewichtseinheit
0.019048 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Dual
FET-Typ
2 P-Channel (Dual)
Leistung max
2W
Transistor-Typ
2 P-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
1300pF @ 25V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
21 mOhm @ 8A, 10V
Vgs-th-Max-Id
2.4V @ 25μA
Gate-Lade-Qg-Vgs
39nC @ 10V
Pd-Verlustleistung
2 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
- 8 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Widerstand
17 mOhms
Transistor-Polarität
P-Kanal
Qg-Gate-Ladung
13 nC
Tags
IRF936, IRF93, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET P-CH 30V 8A 8-Pin SOIC N Tube
***ernational Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
***Components
MOSFET Dual P-Ch 30V 8A HEXFET SOIC8
***ied Electronics & Automation
MOSFET, DUAL P-CHANNEL, -30V, 8.0A, SO-8
***i-Key
MOSFET P-CH DUAL 30V 8.0A SO-8
***trelec
MOSFET [IR] IRF9362PBF MOSFET
***ronik
2P-CH -30V 8A 21mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Dual P-Channel MOSFET; Charge and Discharge Switch for Notebook PC Battery Application | Target Applications: Battery Protection
***ark
P Channel, MOSFET, -30V, -8A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V ;RoHS Compliant: Yes
***nell
MOSFET,PP CH,DIODE,30V,8A,SO8; Module Configuration:Dual; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-8A
***ment14 APAC
MOSFET,PP CH,DIODE,30V,8A,SO8; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-8A; Drain Source Voltage Vds:-30V; Module Configuration:Dual; On Resistance Rds(on):0.017ohm; Power Dissipation Pd:2W
Teil # Mfg. Beschreibung Aktie Preis
IRF9362PBF
DISTI # IRF9362PBF-ND		Infineon Technologies AGMOSFET 2P-CH 30V 8A 8SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF9362PBF
    DISTI # 70019299    		Infineon Technologies AGIRF9362PBF Dual P-channel MOSFET Transistor,8 A,30 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 3800:$0.4310
    • 7600:$0.4220
    • 19000:$0.4090
    IRF9362PBF
    DISTI # 942-IRF9362PBF    		Infineon Technologies AGMOSFET DUAL -30V P-CH 20V VGS MAX
    RoHS: Compliant    		0
      IRF9362PBF
      DISTI # 1857301      		Infineon Technologies AGMOSFET,PP CH,DIODE,30V,8A,SO8
      RoHS: Compliant      		0
      • 1:$1.4800
      • 10:$1.2200
      • 100:$0.9880
      • 500:$0.8830
      • 1000:$0.7830
      • 2500:$0.7280
      • 10000:$0.7030
      Bild Teil # Beschreibung
      IRF9362TRPBF

      Mfr.#: IRF9362TRPBF

      OMO.#: OMO-IRF9362TRPBF

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      Mfr.#: IRF9358PBF

      OMO.#: OMO-IRF9358PBF

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      IRF9317TRPBF-CUT TAPE

      Mfr.#: IRF9317TRPBF-CUT TAPE

      OMO.#: OMO-IRF9317TRPBF-CUT-TAPE-1190

      		 Neu und Original
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      Mfr.#: IRF9317PBF

      OMO.#: OMO-IRF9317PBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRF9335PBF

      OMO.#: OMO-IRF9335PBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRF9389TRPBF

      OMO.#: OMO-IRF9389TRPBF-INFINEON-TECHNOLOGIES

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      OMO.#: OMO-IRF9392TRPBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRF9393PBF

      OMO.#: OMO-IRF9393PBF-INFINEON-TECHNOLOGIES

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      IRF9395MTRPBF.

      Mfr.#: IRF9395MTRPBF.

      OMO.#: OMO-IRF9395MTRPBF--1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IRF9362PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,61 $
      0,61 $
      10
      0,58 $
      5,83 $
      100
      0,55 $
      55,22 $
      500
      0,52 $
      260,75 $
      1000
      0,49 $
      490,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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