IRF936

IRF9362TRPBF vs IRF9362PBF vs IRF9362PBF-1

 
PartNumberIRF9362TRPBFIRF9362PBFIRF9362PBF-1
DescriptionMOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capblMOSFET 2P-CH 30V 8A 8SOIC
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance17 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Pd Power Dissipation2 W--
ConfigurationDualDual-
PackagingReelTube Alternate Packaging-
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel2 P-Channel-
Width3.9 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001555840--
Unit Weight0.019048 oz0.019048 oz-
Series-HEXFETR-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 P-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-1300pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-8A-
Rds On Max Id Vgs-21 mOhm @ 8A, 10V-
Vgs th Max Id-2.4V @ 25μA-
Gate Charge Qg Vgs-39nC @ 10V-
Pd Power Dissipation-2 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 8 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-17 mOhms-
Qg Gate Charge-13 nC-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF9362TRPBF MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl
Infineon Technologies
Infineon Technologies
IRF9362PBF MOSFET 2P-CH 30V 8A 8SOIC
IRF9362TRPBF MOSFET 2P-CH 30V 8A 8SOIC
IRF9362PBF-1 Neu und Original
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