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IRGB4059DPBF

IRGB4059DPBF
Mfr. #:
IRGB4059DPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V UltraFast Trench IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGB4059DPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB4059DPBF DatasheetIRGB4059DPBF Datasheet (P4-P6)IRGB4059DPBF Datasheet (P7-P9)IRGB4059DPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220AB
Aufbau
Single
Leistung max
56W
Reverse-Recovery-Time-trr
55ns
Strom-Kollektor-Ic-Max
8A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
Graben
Strom-Kollektor-gepulster-Icm
16A
Vce-on-Max-Vge-Ic
2.05V @ 15V, 4A
Schaltenergie
35μJ (on), 75μJ (off)
Gate-Gebühr
9nC
Td-ein-aus-25°C
25ns/65ns
Testbedingung
400V, 4A, 100 Ohm, 15V
Pd-Verlustleistung
56 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.05 V
Kontinuierlicher Kollektorstrom-bei-25-C
8 A
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
8 A
Tags
IRGB4059, IRGB405, IRGB40, IRGB4, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-220AB package
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
SINGLE IGBT, 600V; Transistor Type: IGBT; DC Collector Current: 8A; Collector Emitter Voltage Vces: 600V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; No. of Pins: 3; C-E Breakdown Voltage: 2.2V
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Dis Short Circuit Rated IGBT
***Yang
IGBT 600V 8A 60W TO220 - Bulk
***th Star Micro
IGBT W/DIODE 600V 5A
***el Electronic
RES SMD 332 OHM 1% 1/16W 0402
***i-Key Marketplace
N-CHANNEL IGBT
***et
IGBT 600V 8A 35W TO220F
***i-Key
IGBT SHORT CIRC 600V 5A TO-220F
***i-Key Marketplace
IGBT, 8A, 600V, N-CHANNEL
***el Electronic
RES 4.7K OHM 1% 1/16W 0402
***ser
IGBTs 600V/5A/w/FRD
***ical
Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP
***el Electronic
In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
STGF10NC60KD,IGBT N-ch 600V 10A TO220FP
***ark
IGBT, 600V, 9A, 150DEG C, 25W; Continuous Collector Current:9A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 20W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Dis High Perf IGBT
***Yang
IGBT 600V 6A 30W TO220 - Bulk
***inecomponents.com
Discrete, High Performance IGBT with Diode
***ser
IGBTs Dis,High Perf IGBT
***i-Key Marketplace
N-CHANNEL IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
10 A, 600 V, fast IGBT with Ultrafast diode
Teil # Mfg. Beschreibung Aktie Preis
IRGB4059DPBF
DISTI # 19273322		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube167
  • 42:$1.5000
IRGB4059DPBF
DISTI # IRGB4059DPBF-ND		Infineon Technologies AGIGBT 600V 8A 56W TO220AB
RoHS: Compliant
Min Qty: 250
Container: Tube		Limited Supply - Call
    IRGB4059DPBF
    DISTI # IRGB4059DPBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRGB4059DPBF)
    Min Qty: 288
    Container: Bulk    		Americas - 0
    • 864:$1.0900
    • 1440:$1.0900
    • 2880:$1.0900
    • 288:$1.1900
    • 576:$1.1900
    IRGB4059DPBF
    DISTI # 88K4671    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 88K4671)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
      IRGB4059DPBF
      DISTI # 88K4671      		Infineon Technologies AGSINGLE IGBT, 600V,DC Collector Current:8A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:56W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes167
      • 1:$1.2000
      • 10:$1.2000
      • 25:$1.2000
      • 50:$1.2000
      • 100:$1.2000
      • 250:$1.2000
      • 500:$1.2000
      IRGB4059DPBF
      DISTI # 942-IRGB4059DPBF      		Infineon Technologies AGIGBT Transistors 600V UltraFast Trench IGBT
      RoHS: Compliant      		0
        IRGB4059DPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant        		420
        • 1000:$1.1500
        • 500:$1.2100
        • 100:$1.2600
        • 25:$1.3100
        • 1:$1.4100
        IRGB4059DPBFInternational RectifierInsulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant        		600
        • 1000:$1.1500
        • 500:$1.2100
        • 100:$1.2600
        • 25:$1.3100
        • 1:$1.4100
        IRGB4059DPBFInternational Rectifier 236
          IRGB4059DPBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***363
          • 196:$1.4208
          • 90:$1.5360
          • 1:$3.0720
          IRGB4059DPBF.
          DISTI # 2133356          		Infineon Technologies AGSINGLE IGBT, 600V
          RoHS: Compliant          		167
          • 1:$3.1400
          IRGB4059DPBF.
          DISTI # 2133356          		Infineon Technologies AGSINGLE IGBT, 600V
          RoHS: Compliant          		167
          • 100:£1.5300
          • 50:£1.7700
          • 25:£1.8900
          • 10:£2.1600
          • 1:£2.4800
          IRGB4059DPBFInternational Rectifier 
          RoHS: Compliant          		Europe - 250
            Bild Teil # Beschreibung
            IRGB4056DPBF

            Mfr.#: IRGB4056DPBF

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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3500
            Menge eingeben:
            Der aktuelle Preis von IRGB4059DPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            1,64 $
            1,64 $
            10
            1,55 $
            15,53 $
            100
            1,47 $
            147,15 $
            500
            1,39 $
            694,90 $
            1000
            1,31 $
            1 308,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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