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SIHU3N50D-E3

SIHU3N50D-E3
Mfr. #:
SIHU3N50D-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 500V Vds 30V Vgs IPAK (TO-251)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHU3N50D-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU3N50D-E3 DatasheetSIHU3N50D-E3 Datasheet (P4-P6)SIHU3N50D-E3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHU3N50D-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
3 A
Rds On - Drain-Source-Widerstand:
3.2 Ohms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
69 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
D
Marke:
Vishay / Siliconix
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
SIHU3N50D-GE3
Gewichtseinheit:
0.011640 oz
Tags
SIHU3N50D, SIHU3, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHU3N50D-E3
DISTI # SIHU3N50D-E3-ND		Vishay SiliconixMOSFET N-CH 500V 3A TO251 IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.3992
SIHU3N50D-E3
DISTI # SIHU3N50D-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-251AA - Tape and Reel (Alt: SIHU3N50D-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3769
  • 6000:$0.3659
  • 12000:$0.3509
  • 18000:$0.3409
  • 30000:$0.3319
SIHU3N50D-E3
DISTI # 78-SIHU3N50D-E3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2630
  • 1:$0.9100
  • 10:$0.7470
  • 100:$0.5730
  • 500:$0.4930
  • 1000:$0.3890
  • 2500:$0.3630
  • 5000:$0.3450
  • 10000:$0.3370
SIHU3N50D-GE3
DISTI # 78-SIHU3N50D-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2999
  • 1:$0.9300
  • 10:$0.7410
  • 100:$0.5620
  • 500:$0.4640
  • 1000:$0.3720
  • 3000:$0.3370
  • 6000:$0.3140
  • 9000:$0.3020
SIHU3N50D-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		Americas -
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    Mfr.#: SIHD1K4N60E-GE3

    OMO.#: OMO-SIHD1K4N60E-GE3

    		 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
    ECLAMP2357NQTLT

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    SI8620EB-B-IS

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    		 DGTL ISO 2.5KV 2CH GEN PUR 8SOIC
    ADUM110N0BRZ

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    SIHD1K4N60E-GE3

    Mfr.#: SIHD1K4N60E-GE3

    OMO.#: OMO-SIHD1K4N60E-GE3-VISHAY

    		 E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von SIHU3N50D-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,90 $
    0,90 $
    10
    0,75 $
    7,47 $
    100
    0,57 $
    57,30 $
    500
    0,49 $
    246,50 $
    1000
    0,42 $
    421,00 $
    2500
    0,40 $
    997,50 $
    5000
    0,36 $
    1 825,00 $
    10000
    0,34 $
    3 420,00 $
    25000
    0,33 $
    8 200,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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