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| PartNumber | SIHU3N50DA-GE3 | SIHU3N50D-E3 | SIHU3N50D-GE3 |
| Description | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | MOSFET N-CH 500V 3A TO251 IPAK |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-251-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 3 A | 3 A | - |
| Rds On Drain Source Resistance | 2.6 Ohms | 3.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 6 nC | 6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 69 W | 69 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Series | D | D | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 1 S | - | - |
| Fall Time | 13 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 75 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 11 ns | 11 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Unit Weight | 0.011993 oz | 0.011640 oz | - |
| Part # Aliases | - | SIHU3N50D-GE3 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHU3N50DA-GE3 | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | |
| SIHU3N50D-E3 | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | ||
Vishay |
SIHU3N50D-E3 | IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS | |
| SIHU3N50D-GE3 | MOSFET N-CH 500V 3A TO251 IPAK | ||
| SIHU3N50DA-GE3 | MOSFET N-CHANNEL 500V 3A IPAK | ||
| SIHU3N50GE3 | Neu und Original |