SIHU3N50D-E3

SIHU3N50D-E3
Mfr. #:
SIHU3N50D-E3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHU3N50D-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHU3N50D-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
E
Verpackung
Rohr
Teil-Aliasnamen
SIHU3N50D-GE3
Gewichtseinheit
0.011640 oz
Montageart
Durchgangsloch
Paket-Koffer
IPAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
104 W
Vgs-Gate-Source-Spannung
5 V
ID-Dauer-Drain-Strom
3 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Widerstand
3.2 Ohms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
6 nC
Tags
SIHU3N50D, SIHU3, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHU3N50D-E3
DISTI # SIHU3N50D-E3-ND
Vishay SiliconixMOSFET N-CH 500V 3A TO251 IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube
Temporarily Out of Stock
  • 3000:$0.3992
SIHU3N50D-E3
DISTI # SIHU3N50D-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-251AA - Tape and Reel (Alt: SIHU3N50D-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3769
  • 6000:$0.3659
  • 12000:$0.3509
  • 18000:$0.3409
  • 30000:$0.3319
SIHU3N50D-E3
DISTI # 78-SIHU3N50D-E3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
2630
  • 1:$0.9100
  • 10:$0.7470
  • 100:$0.5730
  • 500:$0.4930
  • 1000:$0.3890
  • 2500:$0.3630
  • 5000:$0.3450
  • 10000:$0.3370
SIHU3N50D-GE3
DISTI # 78-SIHU3N50D-GE3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
2999
  • 1:$0.9300
  • 10:$0.7410
  • 100:$0.5620
  • 500:$0.4640
  • 1000:$0.3720
  • 3000:$0.3370
  • 6000:$0.3140
  • 9000:$0.3020
SIHU3N50D-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
Americas -
    Bild Teil # Beschreibung
    SIHU3N50DA-GE3

    Mfr.#: SIHU3N50DA-GE3

    OMO.#: OMO-SIHU3N50DA-GE3

    MOSFET 500V Vds 30V Vgs IPAK (TO-251)
    SIHU3N50D-E3

    Mfr.#: SIHU3N50D-E3

    OMO.#: OMO-SIHU3N50D-E3

    MOSFET 500V Vds 30V Vgs IPAK (TO-251)
    SIHU3N50D-E3

    Mfr.#: SIHU3N50D-E3

    OMO.#: OMO-SIHU3N50D-E3-VISHAY

    IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS
    SIHU3N50D-GE3

    Mfr.#: SIHU3N50D-GE3

    OMO.#: OMO-SIHU3N50D-GE3-VISHAY

    MOSFET N-CH 500V 3A TO251 IPAK
    SIHU3N50GE3

    Mfr.#: SIHU3N50GE3

    OMO.#: OMO-SIHU3N50GE3-1190

    Neu und Original
    SIHU3N50DA-GE3

    Mfr.#: SIHU3N50DA-GE3

    OMO.#: OMO-SIHU3N50DA-GE3-VISHAY

    MOSFET N-CHANNEL 500V 3A IPAK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SIHU3N50D-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,50 $
    0,50 $
    10
    0,47 $
    4,73 $
    100
    0,45 $
    44,81 $
    500
    0,42 $
    211,60 $
    1000
    0,40 $
    398,30 $
    Beginnen mit
    Top