OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

ZXMS6005N8Q-13

ZXMS6005N8Q-13
Mfr. #:
ZXMS6005N8Q-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET Low Side IntelliFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMS6005N8Q-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
ZXMS6005N8Q-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
2 A
Rds On - Drain-Source-Widerstand:
150 mOhms
Vgs th - Gate-Source-Schwellenspannung:
700 mV
Vgs - Gate-Source-Spannung:
5 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Pd - Verlustleistung:
1.65 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
IntelliFET
Verpackung:
Spule
Serie:
ZXMS6005N8Q
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
19 us
Produktart:
MOSFET
Anstiegszeit:
14 us
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
34 us
Typische Einschaltverzögerungszeit:
5 us
Tags
ZXMS6005, ZXMS6, ZXMS, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***des Inc SCT
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET, 2A, 1.65W
***ical
Current Limit SW 1-IN 1-OUT 0V to 5.5V 2A Automotive 8-Pin SO T/R
***et
Low Side IntelliFET SO-8 T&R 2.5K
***i-Key
IC PWR DRIVER N-CHAN 1:1 8SOIC
ZXMS6005N8 IntelliFET Self-Protected MOSFET
Diodes Inc. ZXMS6005N8 IntelliFET Self-Protected MOSFET is designed as a low-side, N-Channel MOSFET with logic-level input. The design integrates overcurrent, over-temperature, overvoltage (active clamp), and ESD-protected logic level functionality. These features allow the MOSFET to provide immunity from radiated and conducted emissions in harsh environments. Designers can use the ZXMS6005N8 MOSFET as a general-purpose switch driven from 3.3V or 5V microcontrollers. The ZXMS6005N8 MOSFET offers 60V continuous drain source voltage, 200mΩ on-state resistance, 2.8A nominal load current, and 490mJ clamping energy. With its wide array of protection features, the ZXMS6005N8 IntelliFET is ideal for harsh environments where standard MOSFET may not be rugged enough.Learn More
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
IntelliFET Self-Protected MOSFETs
Diodes Inc. IntelliFET Self-Protected MOSFETs integrate a power MOSFET with a complete array of protection circuits. These protections guard against ESD, over-current, over-voltage and over-temperature conditions. Intelligent MOSFETs sense potentially catastrophic conditions and protects themselves and the connected loads. These protection functions improve overall system reliability. Additional features like status flags provide diagnostic capabilities that aid isolation and rectification faults within a vehicle.
Bild Teil # Beschreibung
ZXMS6003GTA

Mfr.#: ZXMS6003GTA

OMO.#: OMO-ZXMS6003GTA

 MOSFET 60V IntelliFET Over Current Ctrl
ZXMS6001N3QTA

Mfr.#: ZXMS6001N3QTA

OMO.#: OMO-ZXMS6001N3QTA

 MOSFET Low Side IntelliFET
ZXMS6002G

Mfr.#: ZXMS6002G

OMO.#: OMO-ZXMS6002G-1190

 Neu und Original
ZXMS6002GQTA

Mfr.#: ZXMS6002GQTA

OMO.#: OMO-ZXMS6002GQTA-DIODES

 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6004FF

Mfr.#: ZXMS6004FF

OMO.#: OMO-ZXMS6004FF-1190

 Neu und Original
ZXMS6004FFQ

Mfr.#: ZXMS6004FFQ

OMO.#: OMO-ZXMS6004FFQ-1190

 Neu und Original
ZXMS6004SGTA

Mfr.#: ZXMS6004SGTA

OMO.#: OMO-ZXMS6004SGTA-DIODES

 Power Switch Lo Side 0.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
ZXMS6005DGQTA

Mfr.#: ZXMS6005DGQTA

OMO.#: OMO-ZXMS6005DGQTA-DIODES

 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET
ZXMS6006DGTA

Mfr.#: ZXMS6006DGTA

OMO.#: OMO-ZXMS6006DGTA-DIODES

 Trans MOSFET N-CH 60V Automotive 4-Pin(3+Tab) SOT-223 T/R
ZXMS6001N3TA

Mfr.#: ZXMS6001N3TA

OMO.#: OMO-ZXMS6001N3TA-DIODES

 Power Switch ICs - Power Distribution 60V LO INPT CURR SELF PROT LO SD SWCH
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von ZXMS6005N8Q-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,89 $
0,89 $
10
0,74 $
7,44 $
100
0,48 $
48,00 $
1000
0,38 $
384,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top