APT85GR120JD60

Mfr. #:: APT85GR120JD60
Hersteller:: Microchip / Microsemi
Beschreibung:: IGBT Modules FG, IGBT-COMBI, 1200V, 85A, SOT-227
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: APT85GR120JD60 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Mikrochip

Produktkategorie:: IGBT-Module

RoHS:: Y

Produkt:: IGBT Silizium Module

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 1.2 kV

Kollektor-Emitter-Sättigungsspannung:: 3.5 V

Kontinuierlicher Kollektorstrom bei 25 C:: 118 A

Gate-Emitter-Leckstrom:: 250 nA

Pd - Verlustleistung:: 595 W

Paket / Koffer:: ISOTOP-4

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Verpackung:: Rohr

Marke:: Mikrochip / Mikrosemi

Montageart:: SMD/SMT

Maximale Gate-Emitter-Spannung:: 30 V

Produktart:: IGBT-Module

Werkspackungsmenge:: 1

Unterkategorie:: IGBTs

Tags: APT85G, APT85, APT8, APT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT85GR120JD60 Beschreibung

***ure Electronics: APT85GR120JD60 Single 1200 V 116 A 543 W IGBT - SOT-227

***ical: Trans IGBT Module N-CH 1.2KV 116A 4-Pin SOT-227

***rochip: IGBT MOS 8 1200 V 85 A SOT-227

***el Electronic: IGBT MOD 1200V 116A 543W SOT227

*** Stop Electro: Power Field-Effect Transistor, 40A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ical: Trans IGBT Chip N-CH 1200V 128A 543000mW 4-Pin SOT-227

***ure Electronics: APT75GP120J Series 1200 V 128 A Chassis Mount Power MOS 7® IGBT - SOT-227

***rochip: IGBT PT MOS 7 Single 1200 V 75 A SOT-227

***ca Corp: Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 1.2KV 100A 4-Pin SOT-227

***ark: PM-IGBT-TFS-SOT227 ISOTOP SOT-227 (J) Tube RoHS Compliant: Yes

***rochip SCT: High Voltage Power Module, Buck chopper, 1200V, RoHS

***i-Key: POWER MOD IGBT 1200V 100A SOT227

***ure Electronics: APT75GT120JU2 Single 1200 V 100 A 416 W Trench and Field Stop IGBT - SOT-227

*** Stop Electro: Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 1.2KV 100A 4-Pin SOT-227

***ark: PM-IGBT-TFS-SOT227 ISOTOP SOT-227 (J) Tube RoHS Compliant: Yes

***rochip SCT: High Voltage Power Module, Boost chopper, 1200V, RoHS

***el Electronic: IGBT MOD 1200V 100A 416W SOT227

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
APT85GR120JD60 DISTI # APT85GR120JD60-ND	Microsemi Corporation	IGBT MODULE 1200V 116A ISOTOP RoHS: Compliant Min Qty: 1 Container: Tube	40In Stock	100:$32.5068 25:$34.9756 10:$38.0620 1:$41.1500
APT85GR120JD60 DISTI # APT85GR120JD60	Microchip Technology Inc	Trans IGBT Module N-CH 1.2KV 118A 4-Pin SOT-227 - Rail/Tube (Alt: APT85GR120JD60) RoHS: Compliant Min Qty: 14 Container: Tube	Americas - 0	140:$24.2900 70:$24.6900 42:$25.4900 28:$26.2900 14:$27.1900
APT85GR120JD60 DISTI # 494-APT85GR120JD60	Microchip Technology Inc	IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 RoHS: Compliant	14	1:$51.3900 5:$49.6600 10:$48.0500 25:$44.4300 50:$43.0000 100:$41.6600
APT85GR120JD60 DISTI # APT85GR120JD60	Microsemi Corporation	POWER IGBT TRANSISTOR RoHS: Compliant	0	14:$25.7000 50:$25.0500 100:$24.7300

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: APT85GR120B2 OMO.#: OMO-APT85GR120B2	IGBT Modules FG, IGBT, 1200V, 85A, TO-247 T-MAX
	Mfr.#: APT85GR120J OMO.#: OMO-APT85GR120J	IGBT Modules FG, IGBT, 1200V, 85A, SOT-227
	Mfr.#: APT85GR120L OMO.#: OMO-APT85GR120L	IGBT Modules FG, IGBT, 1200V, 85A, TO-264
	Mfr.#: APT85GR120JD60 OMO.#: OMO-APT85GR120JD60	IGBT Modules FG, IGBT-COMBI, 1200V, 85A, SOT-227
	Mfr.#: APT85GR120B2 OMO.#: OMO-APT85GR120B2-MICROSEMI	IGBT 1200V 170A 962W TO247
	Mfr.#: APT85GR120J OMO.#: OMO-APT85GR120J-MICROSEMI	IGBT MODULE 1200V 116A ISOTOP
	Mfr.#: APT85GR120JD60 OMO.#: OMO-APT85GR120JD60-MICROSEMI	IGBT MODULE 1200V 116A ISOTOP
	Mfr.#: APT85GR120L OMO.#: OMO-APT85GR120L-MICROSEMI	Trans IGBT Chip N-CH 1.2KV 170A 3-Pin TO-264 - Rail/Tube (Alt: APT85GR120L)

Verfügbarkeit

Aktie:: 14
Auf Bestellung:: 1997
Menge eingeben:

Der aktuelle Preis von APT85GR120JD60 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~51,39 $~~; ~~51,39 $~~

5: ~~49,66 $~~; ~~248,30 $~~

10: ~~48,05 $~~; ~~480,50 $~~

25: ~~44,43 $~~; ~~1 110,75 $~~

50: ~~43,00 $~~; ~~2 150,00 $~~

100: ~~41,66 $~~; ~~4 166,00 $~~

250: ~~38,88 $~~; ~~9 720,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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APT85GR120JD60

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes