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| PartNumber | APT85GR120B2 | APT85GR120J | APT85GR120JD60 |
| Description | IGBT Modules FG, IGBT, 1200V, 85A, TO-247 T-MAX | IGBT Modules FG, IGBT, 1200V, 85A, SOT-227 | IGBT Modules FG, IGBT-COMBI, 1200V, 85A, SOT-227 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 3.5 V | 3.5 V | 3.5 V |
| Continuous Collector Current at 25 C | 170 A | 118 A | 118 A |
| Gate Emitter Leakage Current | 250 nA | 250 nA | 250 nA |
| Pd Power Dissipation | 962 W | 595 W | 595 W |
| Package / Case | TO-247-3 | ISOTOP-4 | ISOTOP-4 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT85GR120B2 | IGBT Modules FG, IGBT, 1200V, 85A, TO-247 T-MAX | |
| APT85GR120J | IGBT Modules FG, IGBT, 1200V, 85A, SOT-227 | ||
| APT85GR120L | IGBT Modules FG, IGBT, 1200V, 85A, TO-264 | ||
| APT85GR120JD60 | IGBT Modules FG, IGBT-COMBI, 1200V, 85A, SOT-227 | ||
| APT85GR120B2 | IGBT 1200V 170A 962W TO247 | ||
| APT85GR120J | IGBT MODULE 1200V 116A ISOTOP | ||
| APT85GR120JD60 | IGBT MODULE 1200V 116A ISOTOP | ||
| APT85GR120L | Trans IGBT Chip N-CH 1.2KV 170A 3-Pin TO-264 - Rail/Tube (Alt: APT85GR120L) |