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SIE806DF-T1-E3

SIE806DF-T1-E3
Mfr. #:
SIE806DF-T1-E3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIE806DF-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay / Siliconix
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
SIE806DF-E3
Montageart
SMD/SMT
Paket-Koffer
PolarPAK-10
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
5.2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns 10 ns
Anstiegszeit
160 ns 50 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
41.3 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
1.7 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
85 ns
Typische-Einschaltverzögerungszeit
125 ns 20 ns
Kanal-Modus
Erweiterung
Tags
SIE806, SIE80, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0017 Ohms Surface Mount Power Mosfet - PolarPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0021ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:202A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Base Number:806; Current Id Max:60A; N-channel Gate Charge:75nC; On State Resistance @ Vgs = 4.5V:2.1mohm; On State resistance @ Vgs = 10V:1.7mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.6V
Teil # Mfg. Beschreibung Aktie Preis
SIE806DF-T1-E3
DISTI # SIE806DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIE806DF-T1-E3
    DISTI # SIE806DF-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 30V 60A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIE806DF-T1-E3
      DISTI # SIE806DF-T1-E3DKR-ND      		Vishay SiliconixMOSFET N-CH 30V 60A 10-POLARPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIE806DF-T1-E3
        DISTI # 781-SIE806DF-T1-E3        		Vishay IntertechnologiesMOSFET 30V 60A 125W 1.7mohm @ 10V
        RoHS: Compliant        		0
          SIE806DF-T1-E3Vishay Intertechnologies 157
            SIE806DF-T1-E3
            DISTI # 1497640            		Vishay IntertechnologiesMOSFET, N, POLAR PAK
            RoHS: Compliant            		0
            • 1:$4.9200
            • 10:$4.2800
            • 50:$3.6100
            • 100:$3.3800
            • 500:$3.1200
            • 1000:$2.9500
            Bild Teil # Beschreibung
            SIE806DF-T1-GE3

            Mfr.#: SIE806DF-T1-GE3

            OMO.#: OMO-SIE806DF-T1-GE3-VISHAY

            		 MOSFET 30V 202A 125W 1.7mohm @ 10V
            SIE806DF-T1-E3

            Mfr.#: SIE806DF-T1-E3

            OMO.#: OMO-SIE806DF-T1-E3-VISHAY

            		 RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V
            SIE806DF

            Mfr.#: SIE806DF

            OMO.#: OMO-SIE806DF-1190

            		 Neu und Original
            SIE806DF,SIE806DF-T1-E3

            Mfr.#: SIE806DF,SIE806DF-T1-E3

            OMO.#: OMO-SIE806DF-SIE806DF-T1-E3-1190

            		 Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3500
            Menge eingeben:
            Der aktuelle Preis von SIE806DF-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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