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IRF7831TRPBF

IRF7831TRPBF
Mfr. #:
IRF7831TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 21A 3.6mOhm 40nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7831TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7831TRPBF DatasheetIRF7831TRPBF Datasheet (P4-P6)IRF7831TRPBF Datasheet (P7-P9)IRF7831TRPBF Datasheet (P10)
ECAD Model:
Mehr Informationen:
IRF7831TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
4.4 mOhms
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
40 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
IRF7831TRPBF SP001563658
Gewichtseinheit:
0.019048 oz
Tags
IRF7831TRP, IRF7831T, IRF7831, IRF783, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 3.1 Milliohms; ID 21A; SO-8; PD 2.5W; VGS +/-12V
***ark
MOSFET Transistor, N Channel, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V
***ure Electronics
Single N-Channel 30 V 3.6 mOhm 40 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 21A 8-Pin SOIC Tube
***p One Stop Japan
Trans MOSFET N-CH 30V 21A 8-Pin SOIC
*** Source Electronics
MOSFET N-CH 30V 21A 8-SOIC
***eco
IC,IRF7831TRPBF,30V SINGLE N-C HANNEL HEXFET PLCC32<NV
***trelec
MOSFET [IR] IRF7831PBF MOSFET
***ukat
N-Ch 30V 21A 2,5W 0,0036R SO8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ment14 APAC
Prices include import duty and tax. MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:21A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:170A; Row Pitch:6.3mm; SMD Marking:IRF7831PBF; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, LOGIC, SO-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0036ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.35V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:21A; Corrente di Impulso Idm:170A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza Esterna:4.05mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.75mm; Marcatura SMD:IRF7831PBF; No. di Transistor:1; Passo Fila:6.3mm; Profondità Esterna:5.2mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:30V; Tensione Vgs Max:2.35V; Tensione Vgs di Misurazione Rds on:10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF7831TRPBF
DISTI # V72:2272_13890402		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
RoHS: Compliant		749
  • 500:$0.5611
  • 250:$0.6225
  • 100:$0.6294
  • 25:$0.7705
  • 10:$0.7796
  • 1:$0.8826
IRF7831TRPBF
DISTI # IRF7831PBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3948In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IRF7831TRPBF
DISTI # IRF7831PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3948In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IRF7831TRPBF
DISTI # IRF7831PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.5198
IRF7831TRPBF
DISTI # 30701816		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 40000:$0.3292
  • 24000:$0.3349
  • 16000:$0.3465
  • 8000:$0.3599
  • 4000:$0.3733
IRF7831TRPBF
DISTI # 26648810		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
RoHS: Compliant		749
  • 500:$0.5611
  • 250:$0.6225
  • 100:$0.6294
  • 25:$0.7705
  • 19:$0.7796
IRF7831TRPBF
DISTI # IRF7831TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.3889
  • 8000:$0.3749
  • 16000:$0.3609
  • 24000:$0.3489
  • 40000:$0.3429
IRF7831TRPBF
DISTI # IRF7831TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF)
RoHS: Not Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3257
  • 8000:$0.3167
  • 12000:$0.3081
  • 20000:$0.3000
  • 40000:$0.2961
  • 100000:$0.2923
  • 200000:$0.2886
IRF7831TRPBF-1
DISTI # IRF7831TRPBF-1		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF-1)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
    IRF7831TRPBF-1
    DISTI # IRF7831TRPBF-1    		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF-1)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Asia - 0
      IRF7831TRPBF
      DISTI # 33AC5089      		Infineon Technologies AGN CHANNEL MOSFET, 30V, 21A, SOIC,N CHANNEL MOSFET, 30V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:30V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:10V,Threshold RoHS Compliant: Yes0
        IRF7831TRPBF
        DISTI # 70018969        		Infineon Technologies AGMOSFET,30V,21A,3.6 MOHM,40 NC QG,SO-8
        RoHS: Compliant        		0
        • 4000:$1.8600
        • 8000:$1.8230
        • 20000:$1.7670
        • 40000:$1.6930
        • 100000:$1.5810
        IRF7831TRPBF
        DISTI # 942-IRF7831TRPBF        		Infineon Technologies AGMOSFET MOSFT 30V 21A 3.6mOhm 40nC
        RoHS: Compliant        		8533
        • 1:$1.1900
        • 10:$1.0100
        • 100:$0.7750
        • 500:$0.6850
        • 1000:$0.5400
        IRF7831TRPBFInternational Rectifier 1247
          IRF7831TRPBFInternational Rectifier 
          RoHS: Compliant          		Europe - 3118
            IRF7831TRPBF
            DISTI # 1375010            		Infineon Technologies AGN CHANNEL MOSFET, 30V, 21A, SOIC
            RoHS: Compliant            		0
            • 1:$1.8800
            • 10:$1.6000
            • 100:$1.2300
            • 500:$1.0900
            • 1000:$0.8550
            • 4000:$0.7590
            IRF7831TRPBF
            DISTI # 2947033            		Infineon Technologies AGMOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W
            RoHS: Compliant            		1086
            • 5:£0.8510
            • 25:£0.7650
            • 100:£0.5870
            • 250:£0.5530
            • 500:£0.5180
            IRF7831TRPBF
            DISTI # C1S322000571118            		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
            RoHS: Compliant            		4000
            • 4000:$0.4970
            IRF7831TRPBF
            DISTI # C1S322000486430            		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
            RoHS: Compliant            		749
            • 250:$0.6225
            • 100:$0.6294
            • 25:$0.7705
            • 10:$0.7796
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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            1990
            Menge eingeben:
            Der aktuelle Preis von IRF7831TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            1,10 $
            1,10 $
            10
            0,94 $
            9,45 $
            100
            0,73 $
            72,60 $
            500
            0,64 $
            321,00 $
            1000
            0,51 $
            507,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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