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SIR882DP-T1-GE3

SIR882DP-T1-GE3
Mfr. #:
SIR882DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 100V 60A PPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR882DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIR882DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIR882DP-T, SIR882D, SIR882, SIR88, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8
***et Europe
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 100V 60A PPAK SO-8
***
N-CHANNEL 100-V (D-S)
***ark
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case ;RoHS Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:7100µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:17.6A; Power Dissipation:5.4W
***ment14 APAC
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:17.6A; Power Dissipation Pd:5.4W; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIR882DP-T1-GE3
DISTI # V72:2272_09216058		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1
  • 1:$2.7472
SIR882DP-T1-GE3
DISTI # V36:1790_09216058		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
  • 3000000:$1.1040
  • 1500000:$1.1050
  • 300000:$1.1230
  • 30000:$1.1450
  • 3000:$1.1480
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.1057
  • 3000:$1.1482
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.0379
  • 18000:$1.0669
  • 12000:$1.0969
  • 6000:$1.1439
  • 3000:$1.1789
SIR882DP-T1-GE3
DISTI # 94T2661		Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
  • 1000:$1.5100
  • 500:$1.7500
  • 250:$2.0100
  • 100:$2.2600
  • 50:$2.5000
  • 25:$2.7000
  • 1:$2.8400
SIR882DP-T1-GE3
DISTI # 86R3813		Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes0
  • 10000:$1.0200
  • 6000:$1.0600
  • 4000:$1.1000
  • 2000:$1.2200
  • 1000:$1.2800
  • 1:$1.3600
SIR882DP-T1-GE3
DISTI # 78-SIR882DP-T1-GE3		Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 Watts
RoHS: Compliant		0
  • 1:$2.5100
  • 10:$2.0900
  • 100:$1.6200
  • 500:$1.4100
  • 1000:$1.1700
  • 3000:$1.0900
  • 6000:$1.0500
SIR882DP-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET54
    SIR882DP-T1-GE3
    DISTI # 1859000    		Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO8
    RoHS: Compliant    		6
    • 500:$2.1400
    • 100:$2.4400
    • 10:$3.1600
    • 1:$3.8000
    SIR882DP-T1-GE3Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 WattsAmericas - 6000
      SIR882DP-T1-GE3
      DISTI # 1859000      		Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO80
      • 500:£1.0900
      • 250:£1.1700
      • 100:£1.2400
      • 10:£1.6200
      • 1:£2.1900
      Bild Teil # Beschreibung
      SIR882DP-T1-GE3

      Mfr.#: SIR882DP-T1-GE3

      OMO.#: OMO-SIR882DP-T1-GE3

      		 MOSFET 100 Volts 60 Amps 83 Watts
      SIR882DP

      Mfr.#: SIR882DP

      OMO.#: OMO-SIR882DP-1190

      		 Neu und Original
      SIR882DP-T1-GE3

      Mfr.#: SIR882DP-T1-GE3

      OMO.#: OMO-SIR882DP-T1-GE3-VISHAY

      		 MOSFET N-CH 100V 60A PPAK SO-8
      SIR882DP-T1-GE3/R882

      Mfr.#: SIR882DP-T1-GE3/R882

      OMO.#: OMO-SIR882DP-T1-GE3-R882-1190

      		 Neu und Original
      SIR882DP-TI-GE3

      Mfr.#: SIR882DP-TI-GE3

      OMO.#: OMO-SIR882DP-TI-GE3-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von SIR882DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,53 $
      1,53 $
      10
      1,45 $
      14,54 $
      100
      1,38 $
      137,70 $
      500
      1,30 $
      650,25 $
      1000
      1,22 $
      1 224,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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