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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIR882DP-T1-GE3 DISTI # V72:2272_09216058 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant | 1 |
|
| SIR882DP-T1-GE3 DISTI # V36:1790_09216058 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant | 0 |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIR882DP-T1-GE3 DISTI # 94T2661 | Vishay Intertechnologies | MOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes | 0 |
|
| SIR882DP-T1-GE3 DISTI # 86R3813 | Vishay Intertechnologies | MOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes | 0 |
|
| SIR882DP-T1-GE3 DISTI # 78-SIR882DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100 Volts 60 Amps 83 Watts RoHS: Compliant | 0 |
|
| SIR882DP-T1-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 54 | |
| SIR882DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100 Volts 60 Amps 83 Watts | Americas - 6000 | |
| SIR882DP-T1-GE3 DISTI # 1859000 | Vishay Intertechnologies | MOSFET,N CH,DIODE,100V,60A,PPAKSO8 RoHS: Compliant | 6 |
|
| SIR882DP-T1-GE3 DISTI # 1859000 | Vishay Intertechnologies | MOSFET,N CH,DIODE,100V,60A,PPAKSO8 | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SIR882DP-T1-GE3 OMO.#: OMO-SIR882DP-T1-GE3 |
MOSFET 100 Volts 60 Amps 83 Watts |
|
|
Mfr.#: SIR846DP-T1-GE3 OMO.#: OMO-SIR846DP-T1-GE3 |
MOSFET 100V 60A 104W 7.8mohm @ 10V |
|
|
Mfr.#: SIR876DP-T1-GE3 OMO.#: OMO-SIR876DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIR876ADP-T1-GE3 |
|
Mfr.#: SIR800DP OMO.#: OMO-SIR800DP-1190 |
Neu und Original |
|
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Mfr.#: SIR81004F00A1 OMO.#: OMO-SIR81004F00A1-1190 |
Neu und Original |
|
Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3-VISHAY |
MOSFET N-CH 40V 21A PPAK SO-8 |
|
|
Mfr.#: SIR850DPT1GE3 OMO.#: OMO-SIR850DPT1GE3-1190 |
Neu und Original |
|
|
Mfr.#: SIR870DP-T1-GE3 OMO.#: OMO-SIR870DP-T1-GE3-VISHAY |
MOSFET N-CH 100V 60A PPAK SO-8 |
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|
Mfr.#: SIR888DP-T1-GE3 OMO.#: OMO-SIR888DP-T1-GE3-VISHAY |
MOSFET N-CH 25V 40A PPAK SO-8 |
|
|
Mfr.#: SIR892AK OMO.#: OMO-SIR892AK-1190 |
Neu und Original |