OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

NXH80B120H2Q0SG

NXH80B120H2Q0SG
Mfr. #:
NXH80B120H2Q0SG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Modules PIM 1200V 40A DU BST SiC DIODE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NXH80B120H2Q0SG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NXH80B120H2Q0SG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Module
RoHS:
Y
Technologie:
SiC
Produkt:
IGBT Siliziumkarbid-Module
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.2 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Gate-Emitter-Leckstrom:
200 nA
Pd - Verlustleistung:
103 W
Paket / Koffer:
Q0BOOST
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Verpackung:
Tablett
Marke:
ON Semiconductor
Montageart:
Drücken Sie Fit
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
24
Unterkategorie:
IGBTs
Tags
NXH8, NXH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode Bare copper DBC
***ical
Trans IGBT Module N-CH 1200V 41A 103000mW 20-Pin Case 180AJ Tray
***et Europe
Transistor IGBT Module N-CH 1.2kV 40A ±20V Screw Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 40A; Transistor Polarity:n Channel; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:103W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
NXH80B120H2Q0SG Power Integrated Module
ON Semiconductor NXH80B120H2Q0SG Power Integrated Module (PIM) with a dual boost stage consists of two 40A/1200V IGBTs. This module includes two 15A/1200V silicon carbide diodes, two 25A/1600V anti-parallel diodes for the IGBTs, two 25A/1600V bypass rectifiers, and an on-board thermistor. Typical applications include solar inverter and Uninterruptible Power Supplies (UPS).
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
NXH80B120H2Q0SG
DISTI # V99:2348_18980267		ON SemiconductorPIM 1200V, 40A DUAL BOOST24
  • 25:$71.0800
  • 10:$73.9100
  • 5:$75.8500
  • 1:$77.2600
NXH80B120H2Q0SG
DISTI # NXH80B120H2Q0SGOS-ND		ON SemiconductorPIM 1200V, 40A DUAL BOOST
RoHS: Compliant
Min Qty: 1
Container: Tray		24In Stock
  • 24:$75.0200
  • 1:$79.8600
NXH80B120H2Q0SG
DISTI # 26992226		ON SemiconductorPIM 1200V, 40A DUAL BOOST24
  • 1:$77.2600
NXH80B120H2Q0SG
DISTI # NXH80B120H2Q0SG		ON SemiconductorDual Boost Power Module with SiC Rectifier 1200 V 40 A IGBT Tray - Trays (Alt: NXH80B120H2Q0SG)
RoHS: Compliant
Min Qty: 6000
Container: Tray		Americas - 0
    NXH80B120H2Q0SG
    DISTI # 48AC1760    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A,Transistor Polarity:N Channel,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:103W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes22
    • 25:$73.3300
    • 10:$74.8000
    • 5:$76.7800
    • 1:$78.2100
    NXH80B120H2Q0SG
    DISTI # 863-NXH80B120H2Q0SG    		ON SemiconductorIGBT Modules PIM 1200V 40A DU BST SiC DIODE
    RoHS: Compliant    		23
    • 1:$77.4400
    • 5:$76.0200
    • 10:$74.0600
    • 25:$72.6000
    NXH80B120H2Q0SG
    DISTI # 1723298    		ON SemiconductorINTELLIGENT POWER MODULE 40A 1200V, PU24
    • 24:£51.6730
    NXH80B120H2Q0SG
    DISTI # 2835630    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A
    RoHS: Compliant    		22
    • 24:$113.0600
    • 1:$120.3500
    NXH80B120H2Q0SG
    DISTI # 2835630    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A22
    • 50:£54.2800
    • 10:£55.3900
    • 5:£58.0000
    • 1:£59.0900
    Bild Teil # Beschreibung
    NXH80B120H2Q0SG

    Mfr.#: NXH80B120H2Q0SG

    OMO.#: OMO-NXH80B120H2Q0SG

    		 IGBT Modules PIM 1200V 40A DU BST SiC DIODE
    NXH80B120H2Q0SG

    Mfr.#: NXH80B120H2Q0SG

    OMO.#: OMO-NXH80B120H2Q0SG-ON-SEMICONDUCTOR

    		 PIM 1200V, 40A DUAL BOOST
    Verfügbarkeit
    Aktie:
    23
    Auf Bestellung:
    2006
    Menge eingeben:
    Der aktuelle Preis von NXH80B120H2Q0SG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    77,44 $
    77,44 $
    5
    76,02 $
    380,10 $
    10
    74,06 $
    740,60 $
    25
    72,60 $
    1 815,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Top