 |  |  | |
| PartNumber | NXH80B120H2Q0SG | NXH80T120L2Q0S1G | NXH80T120L2Q0S2G |
| Description | IGBT Modules PIM 1200V 40A DU BST SiC DIODE | IGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULE | PIM 1200V, 80A TNPC CUSTO |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Technology | SiC | Si | - |
| Product | IGBT Silicon Carbide Modules | IGBT Silicon Modules | - |
| Configuration | Dual | T-Type | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 600 V, 1200 V | - |
| Collector Emitter Saturation Voltage | 2.2 V | 1.4 V, 2.05 V | - |
| Continuous Collector Current at 25 C | 40 A | 49 A, 67 A | - |
| Gate Emitter Leakage Current | 200 nA | 200 nA, 300 nA | - |
| Pd Power Dissipation | 103 W | 158 W | - |
| Package / Case | Q0BOOST | Q0PACK | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Mounting Style | Press Fit | Press Fit | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 24 | 24 | - |
| Subcategory | IGBTs | IGBTs | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NXH80B120H2Q0SG | IGBT Modules PIM 1200V 40A DU BST SiC DIODE | ||
| NXH80T120L2Q0S1G | IGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULE | ||
| NXH80T120L2Q0S1G | T-Type NPC Power Module 1200 V, 55 A IGBT, 600 V, 50 A IGBT | ||
ON Semiconductor |
NXH80B120H2Q0SG | PIM 1200V, 40A DUAL BOOST | |
| NXH80T120L2Q0S2G | PIM 1200V, 80A TNPC CUSTO | ||
| NXH80T120L2Q0SG | MODULE PIM 80A 1200V PIM20 |