HGTP10N50F1D

HGTP10N50F1D
Mfr. #:
HGTP10N50F1D
Hersteller:
Harris Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP10N50F1D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGTP10N5, HGTP10, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
Trans IGBT Chip N-CH 500V 12A 3-P TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
HGTP10N50E1DHarris Semiconductor17.5A, 500V, N-CHANNEL IGBT
RoHS: Not Compliant
3800
  • 1000:$2.8700
  • 500:$3.0200
  • 100:$3.1400
  • 25:$3.2800
  • 1:$3.5300
Bild Teil # Beschreibung
HGTP10N120BN 10N120BN

Mfr.#: HGTP10N120BN 10N120BN

OMO.#: OMO-HGTP10N120BN-10N120BN-1190

Neu und Original
HGTP10N120BN,10N120BN,

Mfr.#: HGTP10N120BN,10N120BN,

OMO.#: OMO-HGTP10N120BN-10N120BN--1190

Neu und Original
HGTP10N40C1

Mfr.#: HGTP10N40C1

OMO.#: OMO-HGTP10N40C1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40C1D

Mfr.#: HGTP10N40C1D

OMO.#: OMO-HGTP10N40C1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40E1

Mfr.#: HGTP10N40E1

OMO.#: OMO-HGTP10N40E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40E1D

Mfr.#: HGTP10N40E1D

OMO.#: OMO-HGTP10N40E1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40F1D

Mfr.#: HGTP10N40F1D

OMO.#: OMO-HGTP10N40F1D-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N50C1

Mfr.#: HGTP10N50C1

OMO.#: OMO-HGTP10N50C1-1190

Neu und Original
HGTP10N50E1D

Mfr.#: HGTP10N50E1D

OMO.#: OMO-HGTP10N50E1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP10N50F1D

Mfr.#: HGTP10N50F1D

OMO.#: OMO-HGTP10N50F1D-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von HGTP10N50F1D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,00 $
0,00 $
10
0,00 $
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100
0,00 $
0,00 $
500
0,00 $
0,00 $
1000
0,00 $
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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