 |  | | |
| PartNumber | HGTP10N120BN | HGTP10N120BN 10N120BN | HGTP10N120BN,10N120BN, |
| Description | IGBT 1200V 35A 298W TO220AB | ||
| Manufacturer | Fairchild Semiconductor | - | - |
| Product Category | IGBTs - Single | - | - |
| Series | - | - | - |
| Packaging | Tube | - | - |
| Package Case | TO-220-3 | - | - |
| Input Type | Standard | - | - |
| Mounting Type | Through Hole | - | - |
| Supplier Device Package | TO-220AB | - | - |
| Power Max | 298W | - | - |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | 35A | - | - |
| Voltage Collector Emitter Breakdown Max | 1200V | - | - |
| IGBT Type | NPT | - | - |
| Current Collector Pulsed Icm | 80A | - | - |
| Vce on Max Vge Ic | 2.7V @ 15V, 10A | - | - |
| Switching Energy | 320μJ (on), 800μJ (off) | - | - |
| Gate Charge | 100nC | - | - |
| Td on off 25°C | 23ns/165ns | - | - |
| Test Condition | 960V, 10A, 10 Ohm, 15V | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
HGTP10N120BN | IGBT 1200V 35A 298W TO220AB | |
| HGTP10N120BN 10N120BN | Neu und Original | ||
| HGTP10N120BN,10N120BN, | Neu und Original | ||
| HGTP10N50C1 | Neu und Original | ||
| HGTP10N50C1D | Neu und Original | ||
| HGTP10N50F1D | Neu und Original | ||
| HGTP10N120BN G10N120BN | Neu und Original | ||
| HGTP10N40C1 | Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40C1D | Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40E1 | Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40E1D | Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40F1D | Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N50E1 | Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N50E1D | Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB |