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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTP10N50E1D | Harris Semiconductor | 17.5A, 500V, N-CHANNEL IGBT RoHS: Not Compliant | 3800 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGTP10N120BN |
IGBT 1200V 35A 298W TO220AB |
|
Mfr.#: HGTP10N120BN 10N120BN |
Neu und Original |
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Mfr.#: HGTP10N120BN G10N120BN |
Neu und Original |
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Mfr.#: HGTP10N120BN,10N120BN, |
Neu und Original |
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Mfr.#: HGTP10N40C1D OMO.#: OMO-HGTP10N40C1D-1190 |
Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB |
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Mfr.#: HGTP10N40E1 OMO.#: OMO-HGTP10N40E1-1190 |
Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB |
|
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Mfr.#: HGTP10N40F1D OMO.#: OMO-HGTP10N40F1D-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB |
|
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Mfr.#: HGTP10N50E1 OMO.#: OMO-HGTP10N50E1-1190 |
Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB |
|
|
Mfr.#: HGTP10N50E1D OMO.#: OMO-HGTP10N50E1D-1190 |
Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB |
|
|
Mfr.#: HGTP10N50F1D OMO.#: OMO-HGTP10N50F1D-1190 |
Neu und Original |