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HGTP10N120BN

HGTP10N120BN
Mfr. #:
HGTP10N120BN
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 1200V 35A 298W TO220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP10N120BN Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220AB
Leistung max
298W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
35A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
80A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 10A
Schaltenergie
320μJ (on), 800μJ (off)
Gate-Gebühr
100nC
Td-ein-aus-25°C
23ns/165ns
Testbedingung
960V, 10A, 10 Ohm, 15V
Tags
HGTP10N1, HGTP10, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 1200 V 35 A Flange Mount IGBT - TO-220AB
***ark
RAIL / PWR IGBT 35A 1200V NPT N-CHANNEL TO-220AB
***et
PWR IGBT 35A 1200V NPT N-CHANNEL TO-220AB
***i-Key
IGBT NPT N-CH 1200V 35A TO-220AB
*** Source Electronics
IGBT 1200V 35A 298W TO220AB
***ser
IGBTs 35A, 1200V, N-Ch
***Semiconductor
1200V, NPT IGBT
***rchild Semiconductor
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Teil # Mfg. Beschreibung Aktie Preis
HGTP10N120BN
DISTI # HGTP10N120BNFS-ND		ON SemiconductorIGBT 1200V 35A 298W TO220AB
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
  • 800:$1.7840
HGTP10N120BN
DISTI # HGTP10N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP10N120BN)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.1900
  • 1600:$1.1900
  • 3200:$1.0900
  • 4800:$1.0900
  • 8000:$1.0900
HGTP10N120BN
DISTI # HGTP10N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP10N120BN)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.4900
  • 10:€1.3900
  • 25:€1.1900
  • 50:€1.1900
  • 100:€1.0900
  • 500:€1.0900
  • 1000:€1.0900
HGTP10N120BN
DISTI # 98B1940		ON SemiconductorTRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-220AB RoHS Compliant: Yes0
  • 1:$3.1700
  • 10:$2.5500
  • 100:$2.0500
  • 500:$1.8000
  • 1000:$1.4900
  • 2500:$1.3700
  • 10000:$1.3000
HGTP10N120BNFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		1696
  • 1000:$1.9500
  • 500:$2.0500
  • 100:$2.1300
  • 25:$2.2300
  • 1:$2.4000
HGTP10N120BNFSFairchild Semiconductor Corporation 
RoHS: Not Compliant		257
    HGTP10N120BN
    DISTI # 512-HGTP10N120BN    		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
    RoHS: Compliant    		0
      HGTP10N120BNON SemiconductorINSTOCK403
        Bild Teil # Beschreibung
        HGTP10N120BN G10N120BN

        Mfr.#: HGTP10N120BN G10N120BN

        OMO.#: OMO-HGTP10N120BN-G10N120BN-1190

        		 Neu und Original
        HGTP10N120BN,10N120BN,

        Mfr.#: HGTP10N120BN,10N120BN,

        OMO.#: OMO-HGTP10N120BN-10N120BN--1190

        		 Neu und Original
        HGTP10N40C1D

        Mfr.#: HGTP10N40C1D

        OMO.#: OMO-HGTP10N40C1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40E1

        Mfr.#: HGTP10N40E1

        OMO.#: OMO-HGTP10N40E1-1190

        		 Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40E1D

        Mfr.#: HGTP10N40E1D

        OMO.#: OMO-HGTP10N40E1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40F1D

        Mfr.#: HGTP10N40F1D

        OMO.#: OMO-HGTP10N40F1D-1190

        		 Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50C1D

        Mfr.#: HGTP10N50C1D

        OMO.#: OMO-HGTP10N50C1D-1190

        		 Neu und Original
        HGTP10N50E1

        Mfr.#: HGTP10N50E1

        OMO.#: OMO-HGTP10N50E1-1190

        		 Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50E1D

        Mfr.#: HGTP10N50E1D

        OMO.#: OMO-HGTP10N50E1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50F1D

        Mfr.#: HGTP10N50F1D

        OMO.#: OMO-HGTP10N50F1D-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von HGTP10N120BN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,64 $
        1,64 $
        10
        1,55 $
        15,53 $
        100
        1,47 $
        147,15 $
        500
        1,39 $
        694,90 $
        1000
        1,31 $
        1 308,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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