SI3951DV-T1-GE3

SI3951DV-T1-GE3
Mfr. #:
SI3951DV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V 2.7A 2.0W 115mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3951DV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3951DV-T1-GE3 DatasheetSI3951DV-T1-GE3 Datasheet (P4-P6)SI3951DV-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SI3951DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI3
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI3951DV-GE3
Gewichtseinheit:
0.000705 oz
Tags
SI3951D, SI3951, SI395, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-Channel 20V 2.5A 6-Pin TSOP T/R
***nell
DUAL P CHANNEL MOSFET, -20V, 2.7A
***ment14 APAC
DUAL P CHANNEL MOSFET, -20V, 2.7A; Trans; DUAL P CHANNEL MOSFET, -20V, 2.7A; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-2.5A; Drain Source Voltage Vds, P Channel:-20V; On Resistance Rds(on), P Channel:0.092ohm; Rds(on) Test Voltage Vgs:-4.5V
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3951DV-T1-GE3
DISTI # SI3951DV-T1-GE3-ND
Vishay SiliconixMOSFET 2P-CH 20V 2.7A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.3669
SI3951DV-T1-GE3
DISTI # SI3951DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3951DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3339
  • 6000:$0.3239
  • 12000:$0.3109
  • 18000:$0.3029
  • 30000:$0.2939
SI3951DV-T1-GE3
DISTI # 781-SI3951DV-GE3
Vishay IntertechnologiesMOSFET 20V 2.7A 2.0W 115mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3340
  • 6000:$0.3110
  • 9000:$0.3000
  • 24000:$0.2880
SI3951DV-T1-GE3. 57
    Bild Teil # Beschreibung
    SI3951DV-T1-GE3

    Mfr.#: SI3951DV-T1-GE3

    OMO.#: OMO-SI3951DV-T1-GE3

    MOSFET 20V 2.7A 2.0W 115mohm @ 4.5V
    SI3951DV-T1-E3

    Mfr.#: SI3951DV-T1-E3

    OMO.#: OMO-SI3951DV-T1-E3

    MOSFET RECOMMENDED ALT 78-SI3993CDV-T1-GE3
    SI3951DV-T1-GE3

    Mfr.#: SI3951DV-T1-GE3

    OMO.#: OMO-SI3951DV-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 2.7A 2.0W 115mohm @ 4.5V
    SI3951DV

    Mfr.#: SI3951DV

    OMO.#: OMO-SI3951DV-1190

    Neu und Original
    SI3951DV-T1-E3

    Mfr.#: SI3951DV-T1-E3

    OMO.#: OMO-SI3951DV-T1-E3-VISHAY

    MOSFET 2P-CH 20V 2.7A 6-TSOP
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von SI3951DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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