CSD17506Q5A

Mfr. #:: CSD17506Q5A
Beschreibung:: MOSFET 30V,NCh NexFET Pwr MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD17506Q5A Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD17506Q5A Mehr Informationen CSD17506Q5A Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: VSONP-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 100 A

Rds On - Drain-Source-Widerstand:: 4 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 8.3 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 3.2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 1 mm

Länge:: 6 mm

Serie:: CSD17506Q5A

Transistortyp:: 1 N-Channel

Typ:: Leistungs-MOSFET

Breite:: 4.9 mm

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 76 S

Abfallzeit:: 5.3 ns

Produktart:: MOSFET

Anstiegszeit:: 13 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 13 ns

Typische Einschaltverzögerungszeit:: 7.5 ns

Tags: CSD17506, CSD1750, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17506Q5A Beschreibung

***as Instruments: 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4 mOhm 8-VSONP -55 to 150

***p One Stop Global: Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R

***ponent Stockers USA: 23 A 30 V 0.0053 ohm N-CHANNEL Si POWER MOSFET

*** Stop Electro: Power Field-Effect Transistor, 23A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET, N CHANNEL, 30V, 23A, 8SON

***el Electronic: MOSFET 30V,NCh NexFET Pwr MOSFET

***nell: MOSFET, N CH, 30V, 23A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rd; Available until stocks are exhausted Alternative available

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***klin Elektronik: INFINEON SMD MOSFET NFET 30V 27A 3,1mΩ 150°C PQFN IRFH8318TRPBF

***ure Electronics: Single N-Channel 30 V 3.1 mOhm 41 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***Yang: Trans MOSFET N-CH 30V 27A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET, N-CH, 30V, 50A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 59W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***ure Electronics: Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***et Europe: Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24mA; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ment14 APAC: MOSFET, N, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:PQFN; Power Dissipation Pd:3.4W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

***emi: Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks

***ark: Power MOSFET 30V 102A 3.6 mOhm Single N-Channel u8FL / REEL RoHS Compliant: Yes

***Yang: Trans MOSFET N-CH 30V 102A 8-Pin WDFN T/R - Tape and Reel

*** Electronics: MOSFET NFET U8FL 30V 102 A 3.6MOH

***r Electronics: Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: MOSFET, Single N-Channel, 30 V, 102 A

***ment14 APAC: MOSFET'S - SINGLE MOSFET'S TRANSISTORS;

***i-Key: MOSFET N-CH 30V 22A/102A 8WDFN

***enic: 30V 102A 2.9m´Î@10V30A 3.2W 2.2V@250uA 71pF@15V N Channel 1.988nF@15V [email protected] -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 116A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***emi: Single N-Channel Logic Level Power MOSFET 30V, 127A, 2.8mΩ Power MOSFET 30V 116A 3.4 mOhm Single N-Channel SO-8FL

***ical: Trans MOSFET N-CH 30V 24.7A Automotive 5-Pin(4+Tab) SO-FL T/R

***ure Electronics: NVMFS Series 30 V 2.8 mOhm 3.61 W Surface Mount N-Channel Power Mosfet - SO-8 FL

***enic: 30V 127A 2.3m´Î@10V30A 79W 2.2V@250uA 59pF@15V N Channel 1.972nF@15V [email protected] -55¡Í~+175¡Í@(Tj) SO-8FL MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 116A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***emi: Single N-Channel Logic Level Power MOSFET 30V, 127A, 2.8mΩ Power MOSFET 30V 116A 3.4 mOhm Single N-Channel SO-8FL

***ical: Trans MOSFET N-CH 30V 24.7A Automotive 5-Pin(4+Tab) SO-FL T/R

***ark: NFET SO8FL 30V 116A 3.4MO / REEL ROHS COMPLIANT: YES

***el Electronic: RES SMD 52.3K OHM 1% 1/16W 0402

***enic: 30V 127A 2.3m´Î@10V30A 79W 2.2V@250uA 59pF@15V N Channel 1.972nF@15V [email protected] -55¡Í~+175¡Í@(Tj) SO-8FL MOSFETs ROHS

***ure Electronics: Single N-Channel 30 V 3.4 mOhm 13.7 nC STripFET H7 Power MOSFET - D2PAK-3

***icroelectronics: N-channel 30 V, 0.0027 Ohm typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 package

***el Electronic: UltraLow Supply Current, Voltage Supervisory Circuits 6-SOT-23 -40 to 85

***ical: Trans MOSFET N-CH 30V 120A 8-Pin Power Flat EP T/R

***r Electronics: Power Field-Effect Transistor, 120A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***OMO Electronic: The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

CSD17506Q5A Mehr Informationen

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD17506Q5A DISTI # V72:2272_07248778	Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R RoHS: Compliant	87	25:$1.2458 10:$1.2472 1:$1.4449
CSD17506Q5A DISTI # 296-28408-1-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	738In Stock	1000:$0.8005 500:$1.0139 100:$1.3074 10:$1.6540 1:$1.8700
CSD17506Q5A DISTI # 296-28408-6-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	738In Stock	1000:$0.8005 500:$1.0139 100:$1.3074 10:$1.6540 1:$1.8700
CSD17506Q5A DISTI # 296-28408-2-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.6891 2500:$0.7253
CSD17506Q5A DISTI # 25768674	Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R RoHS: Compliant	87	100:$0.9813 25:$1.2455 11:$1.2468
CSD17506Q5A DISTI # CSD17506Q5A	Trans MOSFET N-CH 30V 23A 8-Pin SON EP T/R (Alt: CSD17506Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD17506Q5A DISTI # CSD17506Q5A	Trans MOSFET N-CH 30V 23A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17506Q5A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6829 5000:$0.6499 10000:$0.6279 15000:$0.6069 25000:$0.5899
CSD17506Q5A DISTI # 47T4871	MOSFET, N CHANNEL, 30V, 23A, 8SON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.3V , RoHS Compliant: Yes	0	1:$1.5500 10:$1.3200 100:$1.0200 500:$0.8950 1000:$0.7070
CSD17506Q5A	30V, N-Channel NexFET&#153,Power MOSFET with 20 Volt Vgs	5000	1000:$0.5400 750:$0.6000 500:$0.7500 250:$0.9200 100:$0.9900 25:$1.1600 10:$1.2600 1:$1.4100
CSD17506Q5A DISTI # 595-CSD17506Q5A	MOSFET 30V,NCh NexFET Pwr MOSFET RoHS: Compliant	2223	1:$1.5500 10:$1.3200 100:$1.0200 500:$0.8950 1000:$0.7070 2500:$0.6270
CSD17506Q5A DISTI # 1894556	MOSFET, N CH, 30V, 23A, 8SON RoHS: Compliant	0	5:£1.1000 25:£0.9970 100:£0.7720 250:£0.7250 500:£0.6770
CSD17506Q5A DISTI # 1894556	MOSFET, N CH, 30V, 23A, 8SON RoHS: Compliant	37	1:$2.4600 10:$2.0900 100:$1.6200 500:$1.4200 1000:$1.1300 2500:$0.9930
CSD17506Q5A DISTI # C1S746203513629	Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R RoHS: Compliant	87	25:$1.2458 10:$1.2472

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von CSD17506Q5A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,55 $~~; ~~1,55 $~~

10: ~~1,32 $~~; ~~13,20 $~~

100: ~~1,01 $~~; ~~101,00 $~~

500: ~~0,90 $~~; ~~447,50 $~~

1000: ~~0,71 $~~; ~~707,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD17506Q5A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes