PartNumber | CSD17506Q5A | CSD17506 | CSD17506Q |
Description | MOSFET 30V,NCh NexFET Pwr MOSFET | ||
Manufacturer | Texas Instruments | TI | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | VSONP-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 8.3 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3.2 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | NexFET | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1 mm | - | - |
Length | 6 mm | - | - |
Series | CSD17506Q5A | NexFET | - |
Transistor Type | 1 N-Channel | - | - |
Type | Power MOSFET | - | - |
Width | 4.9 mm | - | - |
Brand | Texas Instruments | - | - |
Forward Transconductance Min | 76 S | - | - |
Fall Time | 5.3 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 13 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns | - | - |
Typical Turn On Delay Time | 7.5 ns | - | - |
Package Case | - | 8-PowerTDFN | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-VSON (5x6) | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 3.2W | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 1650pF @ 15V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 100A (Tc) | - |
Rds On Max Id Vgs | - | 4 mOhm @ 20A, 10V | - |
Vgs th Max Id | - | 1.8V @ 250μA | - |
Gate Charge Qg Vgs | - | 11nC @ 4.5V | - |