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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PSMN010-55D,118 DISTI # C1S537100199489 | Nexperia | Trans MOSFET N-CH Si 55V 75A 3-Pin(2+Tab) DPAK T/R | 10 |
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| PSMN010-55D,118 DISTI # PSMN010-55D,118-ND | NXP Semiconductors | MOSFET N-CH 55V 75A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| PSMN010-55D,118 DISTI # N/A | NXP Semiconductors | MOSFET TAPE13 PWR-MOS | 0 | |
| PSMN010-55D | NXP Semiconductors | 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET | 6 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: PSMN030-60YS,115 OMO.#: OMO-PSMN030-60YS-115 |
MOSFET Single N-Channel 60V 116A 56W 49.6mOhms |
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Mfr.#: PSMN00425B 118 OMO.#: OMO-PSMN00425B-118-1190 |
Neu und Original |
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Mfr.#: PSMN012-80BS118 OMO.#: OMO-PSMN012-80BS118-1190 |
Now Nexperia PSMN012-80BS - Power Field-Effect Transistor, 74A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: PSMN017-80PS OMO.#: OMO-PSMN017-80PS-1190 |
MOSFET,N CHANNEL,80V,50A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0137ohm, Rds(on) Test Voltage Vgs:10V, Th |
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Mfr.#: PSMN027-100P OMO.#: OMO-PSMN027-100P-1190 |
Neu und Original |
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Mfr.#: PSMN035-150P OMO.#: OMO-PSMN035-150P-1190 |
Now Nexperia PSMN035-150P - Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: PSMN0R7-25YLD OMO.#: OMO-PSMN0R7-25YLD-1190 |
Neu und Original |
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Mfr.#: PSMN010-25YLC,115 |
IGBT Transistors MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET |
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Mfr.#: PSMN018-80YS,115-CUT TAPE |
Neu und Original |
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Mfr.#: PSMN022-30PL,127 |
MOSFET N-CH 30V TO220AB |