C3M0120090J

C3M0120090J
Mfr. #:
C3M0120090J
Hersteller:
N/A
Beschreibung:
MOSFET G3 SiC MOSFET 900V, 120 mOhm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
C3M0120090J Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Cree, Inc.
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
900 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
170 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
18 V, - 8 V
Qg - Gate-Ladung:
17.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Produkt:
Leistungs-MOSFET
Typ:
Siliziumkarbid-MOSFET
Marke:
Wolfspeed / Cree
Vorwärtstranskonduktanz - Min:
6.7 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
12.5 ns
Gewichtseinheit:
0.056438 oz
Tags
C3M01200, C3M01, C3M0, C3M
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, MOSFET G3 SiC MOSFET 900V, 120 mOhm
***ark
Mosfet, N-Ch, 900V, 22A, To-263 Rohs Compliant: Yes
***ment14 APAC
场效应管, MOSFET, N沟道, 900V, 22A, TO-263;
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 900V 22A
***nell
MOSFET, CA-N, 900V, 22A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:22A; Tensione Drain Source Vds:900V; Resistenza di Attivazione Rds(on):0.12ohm; Tensione Vgs di Misura Rds(on):15V; Tensione di Soglia Vgs:2.1V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:C2M Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
C3M0120090J
DISTI # V99:2348_14268616
Cree, Inc.Trans MOSFET N-CH Si 900V 22A1000
  • 100:$6.3370
  • 10:$6.5950
  • 1:$6.5960
C3M0120090J
DISTI # C3M0120090J-ND
WolfspeedMOSFET N-CH 900V 22A
RoHS: Compliant
Min Qty: 1
Container: Tube
3560In Stock
  • 1:$6.9400
C3M0120090J-TR
DISTI # C3M0120090J-TRCT-ND
WolfspeedMOSFET N-CH 900V 22A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1529In Stock
  • 1:$7.1500
C3M0120090J-TR
DISTI # C3M0120090J-TRDKR-ND
WolfspeedMOSFET N-CH 900V 22A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1529In Stock
  • 1:$7.1500
C3M0120090J-TR
DISTI # C3M0120090J-TRTR-ND
WolfspeedMOSFET N-CH 900V 22A
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 800:$6.9440
CRD-5FF0912P
DISTI # CRD-5FF0912P-ND
WolfspeedEVAL BOARD FOR C3M0120090J
RoHS: Not compliant
Min Qty: 1
Container: Box
13In Stock
  • 1:$281.2500
C3M0120090J
DISTI # 31612129
Cree, Inc.Trans MOSFET N-CH Si 900V 22A1000
  • 100:$6.3370
  • 10:$6.5950
  • 2:$6.5960
C3M0120090J
DISTI # 941-C3M0120090J
Cree, Inc.MOSFET G3 SiC MOSFET 900V, 120 mOhm
RoHS: Compliant
888
  • 1:$6.6100
  • 100:$6.3600
  • 500:$6.0500
C3M0120090J-TR
DISTI # 941-C3M0120090JTR
Cree, Inc.MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm
RoHS: Compliant
1027
  • 1:$6.6100
  • 100:$6.3600
  • 500:$6.0500
C3M0120090J
DISTI # C3M0120090J
WolfspeedTransistor: N-MOSFET,SiC,unipolar,900V,22A,83W,D2PAK-7,24ns50
  • 1:$13.6000
  • 3:$11.4000
  • 10:$9.0500
C3M0120090J
DISTI # 2630826
WolfspeedMOSFET, N-CH, 900V, 22A, TO-263
RoHS: Compliant
688
  • 100:£5.1800
  • 50:£5.2900
  • 10:£5.4000
  • 5:£5.5100
  • 1:£6.0500
C3M0120090J
DISTI # 2630826
WolfspeedMOSFET, N-CH, 900V, 22A, TO-263
RoHS: Compliant
688
  • 1:$11.0600
C3M0120090J
DISTI # C1S155400413803
Cree, Inc.MOSFETs1000
  • 1000:$6.9230
Bild Teil # Beschreibung
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OMO.#: OMO-UCC27511DBVR

Gate Drivers 4A/8A Sgl Ch Hi-Spd Low-side Gate Driver
RFN20TF6SFHC9

Mfr.#: RFN20TF6SFHC9

OMO.#: OMO-RFN20TF6SFHC9

Diodes - General Purpose, Power, Switching 600V VR 20A IO ITO-220AC; TO-220NFM
C3M0280090J

Mfr.#: C3M0280090J

OMO.#: OMO-C3M0280090J

MOSFET G3 SiC MOSFET 900V, 280 mOhm
B32032B4563K000

Mfr.#: B32032B4563K000

OMO.#: OMO-B32032B4563K000

Safety Capacitors 350VAC 0.056uF 10% L/S=15mm AEC-Q200
MMCX-J-P-H-ST-TH1

Mfr.#: MMCX-J-P-H-ST-TH1

OMO.#: OMO-MMCX-J-P-H-ST-TH1

RF Connectors / Coaxial Connectors
C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D

MOSFET G3 SiC MOSFET 900V, 120mOhm
RFN20TF6SFHC9

Mfr.#: RFN20TF6SFHC9

OMO.#: OMO-RFN20TF6SFHC9-ROHM-SEMI

ROHM'S FAST RECOVERY DIODES ARE
C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D-WOLFSPEED

900V, 120 MOHM, G3 SIC MOSFET
C3M0280090J

Mfr.#: C3M0280090J

OMO.#: OMO-C3M0280090J-WOLFSPEED

MOSFET N-CH 900V 11A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von C3M0120090J dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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