We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
BSP295L6327HTSA1 DISTI # BSP295L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
BSP295L6327HTSA1 DISTI # BSP295L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
BSP295L6327HTSA1 DISTI # BSP295L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
BSP295 L6327 DISTI # BSP295L6327 | Infineon Technologies AG | Trans MOSFET N-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP295L6327) RoHS: Not Compliant Min Qty: 1000 Container: Bulk | Americas - 0 |
|
BSP295L6327HTSA1 DISTI # BSP295L6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT-223 - Bulk (Alt: BSP295L6327HTSA1) Min Qty: 1000 Container: Bulk | Americas - 0 |
|
BSP295 L6327 DISTI # 726-BSP295L6327 | Infineon Technologies AG | MOSFET N-Ch 60V 1.8A SOT-223-3 RoHS: Compliant | 0 | |
BSP295L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 609418 |
|
BSP295L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 49000 |
|
BSP295L6327 DISTI # BSP295 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,60V,1.8A,1.8W,SOT223 | 73 |
|
BSP295L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2128 | |
BSP295L6327 DISTI # 1562498 | Infineon Technologies AG | MOSFET, N, LOGIC, REEL 1K RoHS: Compliant | 0 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: BSP296N H6433 OMO.#: OMO-BSP296N-H6433-1190 |
MOSFET SMALL SIGNAL N-CH | |
Mfr.#: BSP296E6327-01 OMO.#: OMO-BSP296E6327-01-1190 |
INSTOCK | |
Mfr.#: BSP296L6327 OMO.#: OMO-BSP296L6327-1190 |
Trans MOSFET N-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP296L6327) | |
Mfr.#: BSP297L6327HTSA1 |
MOSFET N-CH 200V 660MA SOT-223 | |
Mfr.#: BSP298 E6327 |
MOSFET N-CH 400V 500MA SOT-223 | |
Mfr.#: BSP299 OMO.#: OMO-BSP299-1190 |
N CHANNEL MOSFET, 500V, 400mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:400mA, Drain Source Voltage Vds:500V, On Resistance Rds(on):4ohm, Rds(on) Test Voltage Vgs:10V, | |
Mfr.#: BSP299L6327XT OMO.#: OMO-BSP299L6327XT-1190 |
Neu und Original | |
Mfr.#: BSP296NH6433XTMA1 |
MOSFET N-CH 100V 1.1A SOT-223 | |
Mfr.#: BSP299 E6327 |
MOSFET N-CH 500V 400MA SOT-223 | |
Mfr.#: BSP296NH6327XTSA1 |
MOSFET N-CH 100V 1.2A SOT-223 |