NE3508M04-T2-A

NE3508M04-T2-A
Mfr. #:
NE3508M04-T2-A
Hersteller:
CEL
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE3508M04-T2-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3508M04-T2-A DatasheetNE3508M04-T2-A Datasheet (P4-P6)NE3508M04-T2-A Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
RENESAS
Produktkategorie
HF-FETs
Verpackung
Spule
Montageart
SMD/SMT
Paket-Koffer
FTSMM-4 (M04)
Technologie
GaAs
Transistor-Typ
HFET
Gewinnen
14 dB
Pd-Verlustleistung
175 mW
Maximale-Betriebstemperatur
+ 150 C
Arbeitsfrequenz
2 GHz
ID-Dauer-Drain-Strom
120 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
100 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
NF-Geräusch-Abbildung
0.45 dB
P1dB-Kompressionspunkt
18 dBm
Tags
NE3508M04-T2, NE3508M04-T, NE3508, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 120mA 4-Pin Thin-Type Super Mini-Mold T/R
***ronik
N-CH RF-MOSFET 4V 10mA M04 RoHSconf
***ser
Small Signal GaAs FETs L to S Band Lo Noise Amplifier N-Ch HJFET
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR HFET
Teil # Mfg. Beschreibung Aktie Preis
NE3508M04-T2-A
DISTI # NE3508M04-T2-A-ND
California Eastern Laboratories (CEL)FET RF 4V 2GHZ 4-TSMM
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3508M04-T2-A
    DISTI # 551-NE3508M04-T2-A
    California Eastern Laboratories (CEL)RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
    RoHS: Compliant
    0
      NE3508M04-T2-AChip 1 ExchangeINSTOCK81000
        Bild Teil # Beschreibung
        NE3508M04-EVNF23-A

        Mfr.#: NE3508M04-EVNF23-A

        OMO.#: OMO-NE3508M04-EVNF23-A

        RF Development Tools L to S band LNA Eval Brd
        NE3508M04-T2-A

        Mfr.#: NE3508M04-T2-A

        OMO.#: OMO-NE3508M04-T2-A-CEL

        Neu und Original
        NE3508M04-A

        Mfr.#: NE3508M04-A

        OMO.#: OMO-NE3508M04-A-CEL

        RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
        NE3508M04

        Mfr.#: NE3508M04

        OMO.#: OMO-NE3508M04-1190

        Neu und Original
        NE3508M04-A-ND

        Mfr.#: NE3508M04-A-ND

        OMO.#: OMO-NE3508M04-A-ND-1190

        Neu und Original
        NE3508M04-T1-A

        Mfr.#: NE3508M04-T1-A

        OMO.#: OMO-NE3508M04-T1-A-1190

        Neu und Original
        NE3508M04-T2

        Mfr.#: NE3508M04-T2

        OMO.#: OMO-NE3508M04-T2-1190

        Neu und Original
        NE3508M04-T2-A/79

        Mfr.#: NE3508M04-T2-A/79

        OMO.#: OMO-NE3508M04-T2-A-79-1190

        Neu und Original
        NE3508M04T2A

        Mfr.#: NE3508M04T2A

        OMO.#: OMO-NE3508M04T2A-1190

        Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von NE3508M04-T2-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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