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FQI7N80TU

FQI7N80TU
Mfr. #:
FQI7N80TU
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors MOSFET 800V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQI7N80TU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FSC
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Teil-Aliasnamen
FQI7N80TU_NL
Gewichtseinheit
0.073511 oz
Montageart
Durchgangsloch
Paket-Koffer
I2PAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3.13 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
55 ns
Anstiegszeit
80 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
6.6 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Rds-On-Drain-Source-Widerstand
1.5 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
95 ns
Typische-Einschaltverzögerungszeit
35 ns
Vorwärts-Transkonduktanz-Min
5 S
Kanal-Modus
Erweiterung
Tags
FQI7N, FQI7, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,6.6A I(D),to-262Aa Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 800 V, 6.6 A, 1.5 Ω, I2PAK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQI7N80TU
DISTI # V36:1790_06359039		ON Semiconductor800V N-CHANNEL QFET0
    FQI7N80TU
    DISTI # FQI7N80TU-ND    		ON SemiconductorMOSFET N-CH 800V 6.6A I2PAK
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Temporarily Out of Stock
    • 1000:$1.2932
    FQI7N80TU
    DISTI # FQI7N80TU    		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.9279
    • 500:€0.9429
    • 100:€0.9569
    • 50:€0.9729
    • 25:€1.0709
    • 10:€1.2529
    • 1:€1.5319
    FQI7N80TU
    DISTI # FQI7N80TU    		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Bulk (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 264
    Container: Bulk    		Americas - 0
    • 2640:$1.0900
    • 264:$1.1900
    • 528:$1.1900
    • 792:$1.1900
    • 1320:$1.1900
    FQI7N80TU
    DISTI # FQI7N80TU    		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Rail/Tube (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$0.9169
    • 6000:$0.9399
    • 4000:$0.9519
    • 2000:$0.9639
    • 1000:$0.9709
    FQI7N80TU
    DISTI # 82C4196    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6.6A I(D),TO-262AA ROHS COMPLIANT: YES0
    • 5000:$1.0600
    • 2500:$1.0900
    • 1000:$1.3500
    • 500:$1.5000
    • 100:$1.6300
    • 10:$2.0200
    • 1:$2.3800
    FQI7N80TU
    DISTI # 512-FQI7N80TU    		ON SemiconductorMOSFET 800V N-Channel QFET
    RoHS: Compliant    		0
    • 1:$2.3900
    • 10:$2.0300
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    • 2000:$1.1000
    • 5000:$1.0600
    FQI7N80TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		6588
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    FQI7N80TUFairchild Semiconductor CorporationINSTOCK4750
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      		 IGBT Transistors MOSFET 800V N-Channel QFET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von FQI7N80TU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,38 $
      1,38 $
      10
      1,31 $
      13,07 $
      100
      1,24 $
      123,78 $
      500
      1,17 $
      584,50 $
      1000
      1,10 $
      1 100,30 $
      Beginnen mit
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