BSC883N03MSG

BSC883N03MSG
Mfr. #:
BSC883N03MSG
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC883N03MSG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Tags
BSC883N03MSG, BSC883N03M, BSC883, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC883N03MSGATMA1
DISTI # BSC883N03MSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
    BSC883N03MSGATMA1
    DISTI # BSC883N03MSGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      BSC883N03MSGATMA1
      DISTI # BSC883N03MSGATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        BSC883N03MSGATMA1
        DISTI # SP000507418
        Infineon Technologies AGTrans MOSFET N-CH 30V 19A 8-Pin TDSON EP (Alt: SP000507418)
        RoHS: Compliant
        Min Qty: 1
        Europe - 0
        • 1:€0.5779
        • 10:€0.4899
        • 25:€0.4369
        • 50:€0.3929
        • 100:€0.3819
        • 500:€0.3719
        • 1000:€0.3649
        BSC883N03MS G
        DISTI # 726-BSC883N03MSG
        Infineon Technologies AGMOSFET N-Ch 30V 19A TDSON-8
        RoHS: Compliant
        0
          BSC883N03MSGInfineon Technologies AGPower Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          73343
          • 1000:$0.3800
          • 500:$0.4000
          • 100:$0.4200
          • 25:$0.4400
          • 1:$0.4700
          BSC883N03MS GInfineon Technologies AG 4777
            Bild Teil # Beschreibung
            BSC883N03LS G

            Mfr.#: BSC883N03LS G

            OMO.#: OMO-BSC883N03LS-G

            MOSFET N-Ch 34V 98A TDSON-8
            BSC883N03LSGATMA1

            Mfr.#: BSC883N03LSGATMA1

            OMO.#: OMO-BSC883N03LSGATMA1

            MOSFET LV POWER MOS
            BSC883N03LSGXT

            Mfr.#: BSC883N03LSGXT

            OMO.#: OMO-BSC883N03LSGXT-1190

            Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1)
            BSC883N03LS

            Mfr.#: BSC883N03LS

            OMO.#: OMO-BSC883N03LS-1190

            Neu und Original
            BSC883N03LSG

            Mfr.#: BSC883N03LSG

            OMO.#: OMO-BSC883N03LSG-1190

            Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            BSC883N03LSGATMA1

            Mfr.#: BSC883N03LSGATMA1

            OMO.#: OMO-BSC883N03LSGATMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 34V 17A TDSON-8
            BSC883N03LSGATMA1 , TDZF

            Mfr.#: BSC883N03LSGATMA1 , TDZF

            OMO.#: OMO-BSC883N03LSGATMA1-TDZF-1190

            Neu und Original
            BSC883N03MSG

            Mfr.#: BSC883N03MSG

            OMO.#: OMO-BSC883N03MSG-1190

            Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            BSC883N03MSGATMA1

            Mfr.#: BSC883N03MSGATMA1

            OMO.#: OMO-BSC883N03MSGATMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 34V 19A TDSON-8
            BSC883N03LS G

            Mfr.#: BSC883N03LS G

            OMO.#: OMO-BSC883N03LS-G-317

            RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            2000
            Menge eingeben:
            Der aktuelle Preis von BSC883N03MSG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            0,51 $
            0,51 $
            10
            0,48 $
            4,84 $
            100
            0,46 $
            45,90 $
            500
            0,43 $
            216,75 $
            1000
            0,41 $
            408,00 $
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